| Research of data retention for charge trapping memory by first-principles | |
| Wang Jia-Yu; Jiang Xian-Wei; Dai Guang-Zhen; Chen Jun-Ning; Jin Bo; Lu Shi-Bin | |
| 刊名 | Wuli Xuebao/Acta Physica Sinica
 |
| 2015 | |
| 卷号 | Vol.64 No.21 |
| 关键词 | NONVOLATILE MEMORY STORAGE LAYER FLASH MEMORY OXIDE OXYGEN HFO2 |
| ISSN号 | 1000-3290 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2157727 |
| 专题 | 安徽大学 |
| 作者单位 | 1.Anhui Univ, Sch Elect & Informat Engn, Anhui Prov Key Lab Integrated Circuit Design, Hefei 230601, Peoples R China 2.Hefei Normal Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Jia-Yu,Jiang Xian-Wei,Dai Guang-Zhen,et al. Research of data retention for charge trapping memory by first-principles[J]. Wuli Xuebao/Acta Physica Sinica,2015,Vol.64 No.21. |
| APA | Wang Jia-Yu,Jiang Xian-Wei,Dai Guang-Zhen,Chen Jun-Ning,Jin Bo,&Lu Shi-Bin.(2015).Research of data retention for charge trapping memory by first-principles.Wuli Xuebao/Acta Physica Sinica,Vol.64 No.21. |
| MLA | Wang Jia-Yu,et al."Research of data retention for charge trapping memory by first-principles".Wuli Xuebao/Acta Physica Sinica Vol.64 No.21(2015). |
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