Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device

doi:10.1016/j.jallcom.2018.01.072

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	Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device
	Chen, Y. R.; Li, Z. M.; Zhang, Z. W.; Hu, L. Q.; Jiang, H.; Miao, G. Q.; Song, H.
刊名	Journal of Alloys and Compounds
	2018
卷号	740 页码:816-822
关键词	Data storage materials Resistive switching Metal-insulator-semiconductor Annealing effect Nonvolatile memory nonvolatile memory behaviors mechanism breakdown layer power ti Chemistry Materials Science Metallurgy & Metallurgical Engineering
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2018.01.072
英文摘要	In this paper, the effect of annealing on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN metal-insulator-semiconductor (MIS) structure memristor is demonstrated. The results show that the stability and repeatability of the bipolar resistive switching are greatly improved in annealed Ti/Si3N4/n-GaN MIS devices. The mechanism involved is revealed by both conductive force microscopy (CFM) and x-ray photoelectron spectroscopy (XPS). It is confirmed to in-situ local Ti doping in Si3N4 by thermal annealing and can be ascribed to the local Ti dopants in the Si3N4 bonding the N atoms at positive bias by electro-reductive process that benefits to form stable nanoscale Si filaments. On the contrary, the Si filaments rupture by recombining with N atoms near the n-GaN side at negative bias. The proposed device is apt to integrate with a GaN-based high electron mobility transistor (HEMT) to structure a one-transistor-one-resistor (1T1R) nonvolatile memory cell, which is expected to develop the application of the nitride semiconductors in data storage in addition to the applications in light-emitting diodes, laser diodes, power devices, and photodetectors. (C) 2018 Elsevier B.V. All rights reserved.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60912]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Chen, Y. R.,Li, Z. M.,Zhang, Z. W.,et al. Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device[J]. Journal of Alloys and Compounds,2018,740:816-822.
APA	Chen, Y. R..,Li, Z. M..,Zhang, Z. W..,Hu, L. Q..,Jiang, H..,...&Song, H..(2018).Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device.Journal of Alloys and Compounds,740,816-822.
MLA	Chen, Y. R.,et al."Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device".Journal of Alloys and Compounds 740(2018):816-822.