Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device | |
Chen, Y. R.; Li, Z. M.; Zhang, Z. W.; Hu, L. Q.; Jiang, H.; Miao, G. Q.; Song, H. | |
刊名 | Journal of Alloys and Compounds
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2018 | |
卷号 | 740页码:816-822 |
关键词 | Data storage materials Resistive switching Metal-insulator-semiconductor Annealing effect Nonvolatile memory nonvolatile memory behaviors mechanism breakdown layer power ti Chemistry Materials Science Metallurgy & Metallurgical Engineering |
ISSN号 | 0925-8388 |
DOI | 10.1016/j.jallcom.2018.01.072 |
英文摘要 | In this paper, the effect of annealing on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN metal-insulator-semiconductor (MIS) structure memristor is demonstrated. The results show that the stability and repeatability of the bipolar resistive switching are greatly improved in annealed Ti/Si3N4/n-GaN MIS devices. The mechanism involved is revealed by both conductive force microscopy (CFM) and x-ray photoelectron spectroscopy (XPS). It is confirmed to in-situ local Ti doping in Si3N4 by thermal annealing and can be ascribed to the local Ti dopants in the Si3N4 bonding the N atoms at positive bias by electro-reductive process that benefits to form stable nanoscale Si filaments. On the contrary, the Si filaments rupture by recombining with N atoms near the n-GaN side at negative bias. The proposed device is apt to integrate with a GaN-based high electron mobility transistor (HEMT) to structure a one-transistor-one-resistor (1T1R) nonvolatile memory cell, which is expected to develop the application of the nitride semiconductors in data storage in addition to the applications in light-emitting diodes, laser diodes, power devices, and photodetectors. (C) 2018 Elsevier B.V. All rights reserved. |
内容类型 | 期刊论文 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/60912] ![]() |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Chen, Y. R.,Li, Z. M.,Zhang, Z. W.,et al. Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device[J]. Journal of Alloys and Compounds,2018,740:816-822. |
APA | Chen, Y. R..,Li, Z. M..,Zhang, Z. W..,Hu, L. Q..,Jiang, H..,...&Song, H..(2018).Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device.Journal of Alloys and Compounds,740,816-822. |
MLA | Chen, Y. R.,et al."Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device".Journal of Alloys and Compounds 740(2018):816-822. |
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