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Radiation Tolerant DC Characteristics of InAs/GaAs Quantum-Dot Diodes 会议论文
作者:  Mu, Yifei;  Lam, Sang;  Zhao, Cezhou;  Babazadeh, N.;  Hogg, Richard A.
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02
Finite element analysis on stress distribution in buried quantum dots 期刊论文
2010, 2010
Zhou Wang-Min; Cai Cheng-Yu; Wang Chong-Yu; Yin Shu-Yuan
收藏  |  浏览/下载：5/0
Kinetic Monte Carlo simulation of InAs quantum dots growth pause on GaAs patterned substrate 期刊论文
2010, 2010
He Wei; Hao Zhibiao; Luo Yi
收藏  |  浏览/下载：3/0
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/14
Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 5, 页码: 1597-1600
作者:  Zhang XH
收藏  |  浏览/下载：81/0  |  提交时间：2010/04/28
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy 期刊论文
optics communications, 2010, 卷号: 283, 期号: 7, 页码: 1510-1513
作者:  Zhang XH
收藏  |  浏览/下载：146/2  |  提交时间：2010/04/22
Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311
作者:  Ye XL;  Zhou XL
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Optimizing the gaas capping layer growth of 1.3 mu m inas/gaas quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
Journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:  Yang, Tao;  Nishioka, Masao;  Arakawa, Yasuhiko
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition 期刊论文
Chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
作者:  Liang Song;  Zhu Hong-Liang;  Pan Jiao-Qing;  Zhao Ling-Juan;  Wang Lu-Feng
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:  Yang T
收藏  |  浏览/下载：253/54  |  提交时间：2010/03/08

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