Different growth mechanisms of bimodal In As/GaAs QDs

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	Different growth mechanisms of bimodal In As/GaAs QDs
	Ye XL; Zhou XL
刊名	physica e-low-dimensional systems & nanostructures
	2010
卷号	43 期号:1 页码:308-311
关键词	INAS QUANTUM DOTS GAAS(001) RELAXATION TRANSITION GAAS
ISSN号	1386-9477
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. yhchen@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china [60625402, 60990313]; 973 program [2006cb604908, 2006cb921607]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	in this work, me have adopted photoluminescence (pl) to study the evolution of self-assembled inas/gaas quantum dots (qds) as a function of inas deposition amount. with increasing inas amount, the qds transfer from unimodal to bimodal size distribution. moreover, the pl peak of small-size qds gradually deviates from the well-known anomalous temperature dependency of qds, and follows the inas intrinsic bandgap redshift at large deposition amount, whereas the pl peak of large-size qds demonstrates the anomalous temperature dependency within the investigated deposition range. this indicates the small-size qds are progressively detached from wl the observations are interpreted with respect to different growth mechanisms of the two qds families: the large-size qds locate on the terraces and expand their sizes at the expense of the floating indium atoms, and the small-size qds are at the step edges and grow by eroding wl. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21293]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Ye XL,Zhou XL. Different growth mechanisms of bimodal In As/GaAs QDs[J]. physica e-low-dimensional systems & nanostructures,2010,43(1):308-311.
APA	Ye XL,&Zhou XL.(2010).Different growth mechanisms of bimodal In As/GaAs QDs.physica e-low-dimensional systems & nanostructures,43(1),308-311.
MLA	Ye XL,et al."Different growth mechanisms of bimodal In As/GaAs QDs".physica e-low-dimensional systems & nanostructures 43.1(2010):308-311.