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	Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition
	Liang Song; Zhu Hong-Liang; Pan Jiao-Qing; Zhao Ling-Juan; Wang Lu-Feng; Zhou Fan; Shu Hui-Yun; Bian Jing; An Xin; Wang Wei
刊名	Chinese physics b
	2008-11-01
卷号	17期号:11页码:4300-4304
关键词	Metal-organic chemical vapour deposition Inas/gaas quantum dots Laser
ISSN号	1674-1056
通讯作者	Liang song(liangsong@red.semi.ac.cn)
英文摘要	Photoluminescence (pl) and lasing properties of inas/gaas quantum dots (qds) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. pl measurements show that the low growth rate qd sample has a larger pl intensity and a narrower pl line width than the high growth rate sample. during rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of pl peak wave length. this is caused by the larger inas layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the qds in the low-growth-rate sample. a growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of gaas cap layer, which can flatten the gaas surface effectively. though the method results in a blue shift of pl peak wavelength and a broadening of pl line width, it is essential for the fabrication of room temperature working qd lasers.
WOS关键词	1.3 MU-M ; OPTICAL-PROPERTIES ; SIZE DISTRIBUTION
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000261206700056
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427275
专题	半导体研究所
通讯作者	Liang Song
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liang Song,Zhu Hong-Liang,Pan Jiao-Qing,et al. Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition[J]. Chinese physics b,2008,17(11):4300-4304.
APA	Liang Song.,Zhu Hong-Liang.,Pan Jiao-Qing.,Zhao Ling-Juan.,Wang Lu-Feng.,...&Wang Wei.(2008).Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition.Chinese physics b,17(11),4300-4304.
MLA	Liang Song,et al."Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition".Chinese physics b 17.11(2008):4300-4304.

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