Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition | |
Liang Song; Zhu Hong-Liang; Pan Jiao-Qing; Zhao Ling-Juan; Wang Lu-Feng; Zhou Fan; Shu Hui-Yun; Bian Jing; An Xin; Wang Wei | |
刊名 | Chinese physics b |
2008-11-01 | |
卷号 | 17期号:11页码:4300-4304 |
关键词 | Metal-organic chemical vapour deposition Inas/gaas quantum dots Laser |
ISSN号 | 1674-1056 |
通讯作者 | Liang song(liangsong@red.semi.ac.cn) |
英文摘要 | Photoluminescence (pl) and lasing properties of inas/gaas quantum dots (qds) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. pl measurements show that the low growth rate qd sample has a larger pl intensity and a narrower pl line width than the high growth rate sample. during rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of pl peak wave length. this is caused by the larger inas layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the qds in the low-growth-rate sample. a growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of gaas cap layer, which can flatten the gaas surface effectively. though the method results in a blue shift of pl peak wavelength and a broadening of pl line width, it is essential for the fabrication of room temperature working qd lasers. |
WOS关键词 | 1.3 MU-M ; OPTICAL-PROPERTIES ; SIZE DISTRIBUTION |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000261206700056 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427275 |
专题 | 半导体研究所 |
通讯作者 | Liang Song |
作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Liang Song,Zhu Hong-Liang,Pan Jiao-Qing,et al. Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition[J]. Chinese physics b,2008,17(11):4300-4304. |
APA | Liang Song.,Zhu Hong-Liang.,Pan Jiao-Qing.,Zhao Ling-Juan.,Wang Lu-Feng.,...&Wang Wei.(2008).Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition.Chinese physics b,17(11),4300-4304. |
MLA | Liang Song,et al."Photoluminescence and lasing properties of inas/gaas quantum dots grown by metal-organic chemical vapour deposition".Chinese physics b 17.11(2008):4300-4304. |
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