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半导体研究所 [20]
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期刊论文 [17]
会议论文 [3]
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Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.063114
作者:
Xu B
;
Ye XL
;
Jin P
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/04/11
VERTICAL SELF-ORGANIZATION
QUANTUM WIRES
SURFACE
GROWTH
ALLOY
INALAS/INP(001)
NANOWIRES
INP(001)
ISLANDS
ARRAYS
Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 8, 页码: art.no.083108
Huang, XQ
;
Wang, YL
;
Li, L
;
Liang, L
;
Liu, FQ
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  |  
浏览/下载:40/18
  |  
提交时间:2010/03/17
INP(001)
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
期刊论文
journal of crystal growth, 2005, 卷号: 286, 期号: 1, 页码: 23-27
作者:
Jin P
;
Xu B
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  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
defects
lateral composition modulation
photoluminescence
molecular beam epitaxy
quantum wires
semiconductor III-V material
DOTS
HETEROSTRUCTURES
INALAS/INP(001)
SPECTROSCOPY
WAVELENGTH
INP(001)
Controllable growth of semiconductor nanometer structures
期刊论文
microelectronics journal, 2003, 卷号: 34, 期号: 5-8, 页码: 379-382
Wang ZG
;
Wu J
收藏
  |  
浏览/下载:291/9
  |  
提交时间:2010/08/12
molecular beam epitaxy
nanostructures
INAS QUANTUM DOTS
SELF-ORGANIZATION
MONOLAYER COVERAGE
DENSITY
GAAS
ISLANDS
INP(001)
EPITAXY
Controllable growth of semiconductor nanometer structures
会议论文
conference on low dimensional structures and devices (ldsd), fortaleza, brazil, dec 08-13, 2002
Wang ZG
;
Wu J
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
INAS QUANTUM DOTS
SELF-ORGANIZATION
MONOLAYER COVERAGE
DENSITY
GAAS
ISLANDS
INP(001)
EPITAXY
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
会议论文
symposium on advance characterization of electronic materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Wu J
;
Zeng YP
;
Cui LJ
;
Zhu ZP
;
Wang BX
;
Wang ZG
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
INP(001)
EPITAXY
GAAS
Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation
期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 9, 页码: 6021-6026
Sun ZZ
;
Yoon SF
;
Wu J
;
Wang ZG
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  |  
浏览/下载:85/9
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
MORPHOLOGY
MODULATIONS
SURFACES
INP(001)
GROWTH
ALLOY
INP
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
期刊论文
international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4423-4426
Wu J
;
Zeng YP
;
Cui LJ
;
Zhu ZP
;
Wang BX
;
Wang ZG
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  |  
浏览/下载:88/0
  |  
提交时间:2010/08/12
INP(001)
EPITAXY
GAAS
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 518-522
作者:
Xu B
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  |  
浏览/下载:106/8
  |  
提交时间:2010/08/12
molecular beam epitaxy
semiconductor III-V materials
QUANTUM DOTS
SURFACE-MORPHOLOGY
LOW-THRESHOLD
INP
INP(001)
LUMINESCENCE
ORGANIZATION
ISLANDS
LAYER
Self-assembled inas quantum wires on inp(001)
期刊论文
Journal of crystal growth, 2000, 卷号: 219, 期号: 1-2, 页码: 180-183
作者:
Wu, J
;
Zeng, YP
;
Sun, ZZ
;
Lin, F
;
Xu, B
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  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Inas quantum wires
Inp(001)
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