Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation
Sun ZZ ; Yoon SF ; Wu J ; Wang ZG
刊名journal of applied physics
2002
卷号91期号:9页码:6021-6026
关键词MOLECULAR-BEAM EPITAXY MORPHOLOGY MODULATIONS SURFACES INP(001) GROWTH ALLOY INP
ISSN号0021-8979
通讯作者sun zz,nanyang technol univ,sch elect & elect engn,nanyang ave,singapore 639798,singapore.
中文摘要inas/in0.52al0.48as nanowire multilayer arrays were grown on (001) inp substrate by molecular-beam epitaxy. the structural property of the arrays was investigated by transmission electron microscopy. the results clearly showed the formation of inas nanowires, evolution of inas/inalas interface, and composition and thickness modulations in the inalas spacer layer. a fixed spatial ordering of inas/inalas nanowires was revealed for all the samples. regardless of the change in inalas spacer thickness of different samples, (i) the nanowires of one inas layer are positioned above the nanowire spacing in the previous inas layer and (ii) the layer-ordering orientation angle of nanowires is fixed. the results were explained from the viewpoint of the growth kinetics. the effect of inalas spacers is suggested to play an important role on the spatial ordering of the nanowire arrays. (c) 2002 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11930]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Sun ZZ,Yoon SF,Wu J,et al. Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation[J]. journal of applied physics,2002,91(9):6021-6026.
APA Sun ZZ,Yoon SF,Wu J,&Wang ZG.(2002).Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation.journal of applied physics,91(9),6021-6026.
MLA Sun ZZ,et al."Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation".journal of applied physics 91.9(2002):6021-6026.
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