Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

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	Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
	Jin P; Xu B
刊名	journal of crystal growth
	2005
卷号	286 期号:1 页码:23-27
关键词	defects lateral composition modulation photoluminescence molecular beam epitaxy quantum wires semiconductor III-V material DOTS HETEROSTRUCTURES INALAS/INP(001) SPECTROSCOPY WAVELENGTH INP(001)
ISSN号	0022-0248
通讯作者	lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ahleiwen@red.semi.ac.cn
中文摘要	we report on the photoluminescence (pl) properties of inas/inalas/inp quantum wires (qwrs) with various inas deposited thickness. the pl linewidth of the qwrs decreases with increasing inas deposited thickness due to the different thicknesses of the qwrs and defects in the samples. the defects and lateral composition modulation of the inalas layers play an important role in the temperature-dependent pl properties of the samples. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10916]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Xu B. Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness[J]. journal of crystal growth,2005,286(1):23-27.
APA	Jin P,&Xu B.(2005).Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness.journal of crystal growth,286(1),23-27.
MLA	Jin P,et al."Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness".journal of crystal growth 286.1(2005):23-27.