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Research progress of cholesteric liquid crystals with broadband reflection characteristics in application of intelligent optical modulation materials
期刊论文
CHINESE PHYSICS B, 2016
Zhang, Lan-Ying
;
Gao, Yan-Zi
;
Song, Ping
;
Wu, Xiao-Juan
;
Yuan, Xiao
;
He, Bao-Feng
;
Chen, Xing-Wu
;
Hu, Wang
;
Guo, Ren-Wei
;
Ding, Hang-Jun
;
Xiao, Jiu-Mei
;
Yang, Huai
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/04
cholesteric liquid crystals
soft matter materials
broadband reflection characteristics
intelligent optical modulation materials
HIGH-BIREFRINGENCE
BINAPHTHALENE CROSSLINKINGS
SELECTIVE REFLECTION
PHASE-TRANSITIONS
FILMS
ELASTOMERS
POLYSILOXANES
POLARIZERS
ANISOTROPY
COMPOUND
Design and analysis of the polarization-preserving films for rectangular prism
期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2015, 卷号: 42, 期号: [db:dc_citation_issue]
作者:
Li, Zhaohui
;
Wang, Zhao
;
Huang, Junhui
;
Qi, Jingya
;
Yu, Bao
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/02
Commercial applications
Design and analysis
Fabrication process
High reflection films
Polarization state
Rectangular prisms
Total reflection
Working mechanisms
Phase loss of right-angle prism in roll angle measurement and its solution
期刊论文
Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2014, 卷号: 48, 期号: [db:dc_citation_issue], 页码: 112-116
作者:
Li, Zhaohui
;
Wang, Zhao
;
Huang, Junhui
;
Tang, Shanzhi
;
Guo, Junjie
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/03
Amplification factors
Constructive interference
High reflection films
Interference methods
Measurement system
Phase loss
Right angle prism
Roll angle
Laser-induced damage of the optical films prepared by electron beam evaporation and ion beam sputtering in vacuum
期刊论文
optik, 2014, 卷号: 125, 期号: 21, 页码: 6474
作者:
Ling, Xiulan
;
Wang, Gao
;
Zhao, Yuanan
;
Shao, Jianda
;
Fan, Zhengxiu
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2016/11/28
Vacuum
Laser-induced damage
High reflection films
Organic contamination
Laser-induced damage of the optical films prepared by electron beam evaporation and ion beam sputtering in vacuum
期刊论文
optik, 2014, 卷号: 125, 期号: 21, 页码: 6474
作者:
Ling, Xiulan
;
Wang, Gao
;
Zhao, Yuanan
;
Shao, Jianda
;
Fan, Zhengxiu
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2016/11/28
Vacuum
Laser-induced damage
High reflection films
Organic contamination
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
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  |  
浏览/下载:47/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
Determination of optical constants of zirconia and silica thin films in UV to visible range (EI CONFERENCE)
会议论文
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Advanced Optical Manufacturing Technologies, July 8, 2007 - July 12, 2007, Chengdu, China
Jin W.
;
Jin C.
;
Zhu H.
;
Liu L.
;
Yang H.
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2013/03/25
A curve fitting method for determining the optical constants of some dielectric thin films is described with dispersion theory in the paper. A computer program based on Matlab is developed and optimized. The fitting errors are analyzed with theoretical data
which gives very high accurate results. A program is applied to fitting the measured photometric spectra of ion sputtered zirconia and silica thin films in 200-850nm spectra range. The thickness is verified with the method of grazing x-ray diffraction. With the thickness known
the optical constants of zirconia films near the absorption range are obtained with single-wavelength method. As a result
quite good fitting results are obtained with high accuracy. Finally
an ultraviolet (UV) high-pass optical filter is designed with optical constants extracted by this method. The transmission and reflection spectra of the filter are measured and compared to designed spectra. A good coherence was derived.
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE)
会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.
;
Lu Y. M.
;
Shen D. Z.
;
Yan J. F.
;
Li B. H.
;
Zhang J. Y.
;
Liu Y. C.
;
Fan X. W.
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that
below 500 C
ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra
ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature
which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown
which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
期刊论文
Journal of Crystal Growth, 2004, 卷号: 271, 期号: 1-2, 页码: 165-170
W. F. Xiang
;
H. B. Lu
;
Z. H. Chen
;
X. B. Lu
;
M. He
;
H. Tian
;
Y. L. Zhou
;
C. R. Li
;
X. L. Ma
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  |  
浏览/下载:10/0
  |  
提交时间:2012/04/14
annealing
reflection high-energy electron diffraction
X-ray
diffraction
epitaxial growth
laser molecular beam epitaxy
LaAlO3 film
thin-films
buffer layers
in-situ
srtio3
si(100)
deposition
silicon
mocvd
Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
期刊论文
journal of crystal growth, 2004
Xiang, WF
;
Lu, HB
;
Chen, ZH
;
Lu, XB
;
He, M
;
Tian, H
;
Zhou, YL
;
Li, CR
;
Ma, XL
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/12
annealing
reflection high-energy electron diffraction
X-ray diffraction
epitaxial growth
laser molecular beam epitaxy
LaAlO3 film
THIN-FILMS
BUFFER LAYERS
IN-SITU
SRTIO3
SI(100)
DEPOSITION
SILICON
MOCVD
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