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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
The role of water transport in the failure of silicone rubber coating for implantable electronic devices
期刊论文
PROGRESS IN ORGANIC COATINGS, 2021, 卷号: 159, 页码: 10
作者:
Du, Shiyao
;
Zhang, Yang
;
Meng, Meijiang
;
Tang, Ao
;
Li, Ying
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2021/11/22
Organic coatings
Failure mechanism
Implantable electronic devices
Water transfer
EIS
Finite element analysis
The role of water transport in the failure of silicone rubber coating for implantable electronic devices
期刊论文
PROGRESS IN ORGANIC COATINGS, 2021, 卷号: 159, 页码: 10
作者:
Du, Shiyao
;
Zhang, Yang
;
Meng, Meijiang
;
Tang, Ao
;
Li, Ying
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2021/11/22
Organic coatings
Failure mechanism
Implantable electronic devices
Water transfer
EIS
Finite element analysis
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Research on the electronic properties of graphene/β-Si3N4 (0001) heterojunction
期刊论文
Vacuum, 2021, 卷号: 184
作者:
Cui, Zhihong
;
Lu, Xuefeng
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2021/03/02
Binding energy
Electric fields
Electronic properties
Energy gap
Heterojunctions
Microelectronics
Silicon
Van der Waals forces
Built-in electric fields
DTF calculations
Electronic properties of graphene
Electrons and holes
Equilibrium interlayers
Interlayer spacings
Micro-electronic devices
Population analysis
Mechanisms, influencing factors, and applications of electrohydrodynamic jet printing
期刊论文
Nanotechnology Reviews, 2021, 卷号: 10, 期号: 1, 页码: 1046-1078
作者:
Cai SX(蔡树向)
;
Sun, Yalin
;
Wang, Zhen
;
Yang WG(杨文广)
;
Li, Xiangyu
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/10/03
electrohydrodynamic jet printing
droplet generation process
electronic devices
bioprinting
Two dimensionalization induced enhancing dielectric anisotropy of titania
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 842, 页码: 7
作者:
Wang, Liang
;
Soh, Ai Kah
;
Liu, Shuangyi
收藏
  |  
浏览/下载:103/0
  |  
提交时间:2020/08/24
DFT
Two-dimensional oxide dielectrics
Dielectric property
Energy storage capability
Future electronic devices
Ultra-wideband solar absorber based on refractory titanium metal
会议论文
作者:
Yu, Peiqi
;
Yang, Hua
;
Chen, Xifang
;
Yi, Zao
;
Yao, Weitang
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2020/12/18
Absorption spectra
Electromagnetic waves
Magnetic materials
Optoelectronic devices
Plasmons
Refractory materials
Refractory metals
Solar absorbers
Solar radiation
Surface plasmon resonance
Titanium
Ultra-wideband (UWB)Broadband absorption
Electromagnetic environments
Electromagnetic wave absorber
High temperature condition
Opto-electronic materials
Titanium metals
Wide spectrum
Ultra-wideband solar absorber based on refractory titanium metal
期刊论文
Renewable Energy, 2020, 卷号: 158, 页码: 227-235
作者:
Yu, Peiqi
;
Yang, Hua
;
Chen, Xifang
;
Yi, Zao
;
Yao, Weitang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2020/11/14
Absorption spectra
Electromagnetic waves
Magnetic materials
Optoelectronic devices
Plasmons
Refractory materials
Refractory metals
Solar absorbers
Solar radiation
Surface plasmon resonance
Titanium
Ultra-wideband (UWB)
Broadband absorption
Electromagnetic environments
Electromagnetic wave absorber
High temperature condition
Opto-electronic materials
Titanium metals
Wide spectrum
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
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