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CORC

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High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  
收藏  |  浏览/下载：9/0  |  提交时间：2020/11/13
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates 会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:  Lou, Haijun;  Li, Wentao;  Yang, Yumei;  Lin, Xinnan
收藏  |  浏览/下载：2/0  |  提交时间：2020/11/15
A full-range analytical current model for heterojunction TFET with dual material gate 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 5213-5217
作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19
An Analytical Model of Gate-All-Around Heterojunction Tunneling FET 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 776-782
作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26
Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs 期刊论文
MODERN PHYSICS LETTERS B, 2018, 卷号: 32, 期号: 15
作者:  Liaw, Yue-Gie;  Chen, Chii-Wen;  Liao, Wen-Shiang;  Wang, Mu-Chun;  Zou, Xuecheng
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05
The Security Protection of SiC MOSFET NPC Tri-level Converter 会议论文
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01
作者:  Wu, Wenjun;  Cai, Yuxi;  Wang, Wenxuan;  Cui, Dongjie
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/20
Two-dimensional analytical model for asymmetric dual-gate tunnel FETs 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: Vol.56 No.1, 页码: 014301
作者:  Zhang,Yong Feng;  Guan,Bang Gui;  Xu,Hui Fang;  Dai,Yue Hua
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/22
A surface-potential-based dc model of amorphous oxide semiconductor tfts including degeneration (EI收录) 期刊论文
IEEE Electron Device Letters, 2017, 卷号: 38, 页码: 183-186
作者:  Fang, Jielin[1];  Deng, Wanling[1];  Ma, Xiaoyu[1];  Huang, Junkai[1];  Wu, Weijing[2]
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27

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