×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [22]
华南理工大学 [8]
清华大学 [5]
西安交通大学 [5]
南华大学 [2]
兰州理工大学 [2]
更多...
内容类型
期刊论文 [41]
会议论文 [7]
其他 [4]
会议 [2]
发表日期
2018 [6]
2017 [4]
2016 [5]
2015 [3]
2012 [2]
2011 [3]
更多...
学科主题
712.1.2 Co... [1]
半导体物理 [1]
微电子学 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共54条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
提交时间升序
提交时间降序
题名升序
题名降序
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2020/11/13
Ballistics
Dielectric materials
Drain current
Gate dielectrics
MOSFET devices
Poisson equation
Shims
Direct current performance
High- k
junctionless
Junctionless transistors
Non-equilibrium green functions
Nonequilibrium green function formalisms
Quantum simulators
Subthreshold characteristics
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates
会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:
Lou, Haijun
;
Li, Wentao
;
Yang, Yumei
;
Lin, Xinnan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/15
Drain current
Threshold voltage
junctionless
Junctionless transistors
Recessed gate
sidewall
Sidewall angles
Subthreshold
A full-range analytical current model for heterojunction TFET with dual material gate
期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 5213-5217
作者:
Guan, Yunhe
;
Li, Zunchao
;
Zhang, Wenhao
;
Zhang, Yefei
;
Liang, Feng
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/11/19
Ambipolar behavior
Ambipolar currents
Current modeling
Drain current models
Dual material gate
Gaussian quadratures
Mobile charge
Tunnel field-effect transistors (TFET)
An Analytical Model of Gate-All-Around Heterojunction Tunneling FET
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 776-782
作者:
Guan, Yunhe
;
Li, Zunchao
;
Zhang, Wenhao
;
Zhang, Yefei
;
Liang, Feng
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/11/26
gate all around (GAA)
Analytical model
heterojunction tunneling FET (H-TFET)
drain current (I-DS)
Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs
期刊论文
MODERN PHYSICS LETTERS B, 2018, 卷号: 32, 期号: 15
作者:
Liaw, Yue-Gie
;
Chen, Chii-Wen
;
Liao, Wen-Shiang
;
Wang, Mu-Chun
;
Zou, Xuecheng
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/05
SOI FinFET
threshold voltage (V-t)
drive current
short channel effect (SCE)
swing
transconductance (G(m))
drain-induced barrier lowering (DIBL)
source/drain resistance (R-SD)
The Security Protection of SiC MOSFET NPC Tri-level Converter
会议论文
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01
作者:
Wu, Wenjun
;
Cai, Yuxi
;
Wang, Wenxuan
;
Cui, Dongjie
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/20
SiC MOSFET
drain-source voltage
over-current protection
tri-level
voltage balanced
leakage current
Two-dimensional analytical model for asymmetric dual-gate tunnel FETs
期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: Vol.56 No.1, 页码: 014301
作者:
Zhang,Yong Feng
;
Guan,Bang Gui
;
Xu,Hui Fang
;
Dai,Yue Hua
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/04/22
COMPACT ANALYTICAL-MODEL
FIELD-EFFECT TRANSISTORS
2-D ANALYTICAL-MODEL
DRAIN CURRENT MODEL
THRESHOLD VOLTAGE
SUBTHRESHOLD REGION
TFET
PERFORMANCE
BARRIER
SCALABILITY
A surface-potential-based dc model of amorphous oxide semiconductor tfts including degeneration (EI收录)
期刊论文
IEEE Electron Device Letters, 2017, 卷号: 38, 页码: 183-186
作者:
Fang, Jielin[1]
;
Deng, Wanling[1]
;
Ma, Xiaoyu[1]
;
Huang, Junkai[1]
;
Wu, Weijing[2]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
Amorphous films
Circuit simulation
Computational efficiency
Drain current
Surface potential
Thin film circuits
Thin film transistors
Thin films
Transistors
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:
He, Hongyu*
;
Liu, Yuan
;
Yan, Binghui
;
Lin, Xinnan
;
Zheng, Xueren
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/27
Analytical model
drain current
temperature characteristics
thin-film transistor (TFT)
trap states
Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States
期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660
作者:
He, Hongyu*
;
Liu, Yuan
;
Yan, Binghui
;
Lin, Xinnan
;
Zheng, Xueren
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/27
Analytical model
drain current
temperature characteristics
thin-film transistor (TFT)
trap states
©版权所有 ©2017 CSpace - Powered by
CSpace