QQ客服 官方微博 反馈留言

	A surface-potential-based dc model of amorphous oxide semiconductor tfts including degeneration (EI收录)
	Fang, Jielin[1]; Deng, Wanling[1]; Ma, Xiaoyu[1]; Huang, Junkai[1]; Wu, Weijing[2]
刊名	IEEE Electron Device Letters
	2017
卷号	38页码:183-186
关键词	Amorphous films Circuit simulation Computational efficiency Drain current Surface potential Thin film circuits Thin film transistors Thin films Transistors
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2183803
专题	华南理工大学
作者单位	1.[1] Department of Electronic Engineering, Jinan University, Guangzhou 2.510630, China 3.[2] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 4.510640, China
推荐引用方式 GB/T 7714	Fang, Jielin[1],Deng, Wanling[1],Ma, Xiaoyu[1],等. A surface-potential-based dc model of amorphous oxide semiconductor tfts including degeneration (EI收录)[J]. IEEE Electron Device Letters,2017,38:183-186.
APA	Fang, Jielin[1],Deng, Wanling[1],Ma, Xiaoyu[1],Huang, Junkai[1],&Wu, Weijing[2].(2017).A surface-potential-based dc model of amorphous oxide semiconductor tfts including degeneration (EI收录).IEEE Electron Device Letters,38,183-186.
MLA	Fang, Jielin[1],et al."A surface-potential-based dc model of amorphous oxide semiconductor tfts including degeneration (EI收录)".IEEE Electron Device Letters 38(2017):183-186.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。