| Two-dimensional analytical model for asymmetric dual-gate tunnel FETs | |
| Zhang,Yong Feng; Guan,Bang Gui; Xu,Hui Fang; Dai,Yue Hua | |
| 刊名 | Japanese Journal of Applied Physics
 |
| 2017 | |
| 卷号 | Vol.56 No.1页码:014301 |
| 关键词 | COMPACT ANALYTICAL-MODEL FIELD-EFFECT TRANSISTORS 2-D ANALYTICAL-MODEL DRAIN CURRENT MODEL THRESHOLD VOLTAGE SUBTHRESHOLD REGION TFET PERFORMANCE BARRIER SCALABILITY |
| ISSN号 | 0021-4922;1347-4065 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2155496 |
| 专题 | 安徽大学 |
| 作者单位 | 1.Anhui Sci & Technol Univ, Inst Elect & Elect Engn, Fengyang 233100, Anhui, Peoples R China 2.Anhui Univ, Inst Elect & Informat Engn, Hefei 230601, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang,Yong Feng,Guan,Bang Gui,Xu,Hui Fang,et al. Two-dimensional analytical model for asymmetric dual-gate tunnel FETs[J]. Japanese Journal of Applied Physics,2017,Vol.56 No.1:014301. |
| APA | Zhang,Yong Feng,Guan,Bang Gui,Xu,Hui Fang,&Dai,Yue Hua.(2017).Two-dimensional analytical model for asymmetric dual-gate tunnel FETs.Japanese Journal of Applied Physics,Vol.56 No.1,014301. |
| MLA | Zhang,Yong Feng,et al."Two-dimensional analytical model for asymmetric dual-gate tunnel FETs".Japanese Journal of Applied Physics Vol.56 No.1(2017):014301. |
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