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科研机构
北京大学 [10]
内容类型
期刊论文 [8]
其他 [2]
发表日期
2013 [3]
2011 [2]
2010 [2]
2009 [2]
2008 [1]
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Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method
期刊论文
ieee电子器件汇刊, 2013
Jiang, Xiaobo
;
Wang, Runsheng
;
Yu, Tao
;
Chen, Jiang
;
Huang, Ru
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2015/11/10
Auto-correlation function
cross-correlation
line-edge-roughness (LER)
line-width-roughness (LWR)
modeling
variability
INTRINSIC PARAMETER FLUCTUATIONS
VARIABILITY
MOSFETS
DECANANOMETER
PERFORMANCE
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability
期刊论文
ieee电子器件汇刊, 2013
Wang, Runsheng
;
Jiang, Xiaobo
;
Yu, Tao
;
Fan, Jiewen
;
Chen, Jiang
;
Pan, David Z.
;
Huang, Ru
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/10
FinFET
line-edge roughness (LER)
line-width roughness (LWR)
nanowire
variability
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
MOSFETS
DECANANOMETER
NANOWIRES
OXIDATION
NOISE
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX
期刊论文
ieee电子器件汇刊, 2013
Yang, Yunxiang
;
Markov, Stanislav
;
Cheng, Binjie
;
Zain, Anis Suhaila Mohd
;
Liu, Xiaoyan
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Back-gate bias
line edge roughness (LER)
metal gate granularity (MGG)
random dopant fluctuation (RDF)
statistical variability (SV)
thin buried oxide (BOX)
INTRINSIC PARAMETER FLUCTUATIONS
SIMULATION
DECANANOMETER
IMPACT
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
期刊论文
ieee电子器件汇刊, 2011
Wang, Runsheng
;
Jing Zhuge
;
Huang, Ru
;
Yu, Tao
;
Zou, Jibin
;
Kim, Dong-Won
;
Park, Donggun
;
Wang, Yangyuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Line-edge roughness (LER)
metal-gate work function variation (WFV)
modeling
random dopant fluctuation (RDF)
Si nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) (SNWT)
variability
INTRINSIC PARAMETER FLUCTUATIONS
THRESHOLD VOLTAGE FLUCTUATION
CARRIER TRANSPORT
PERFORMANCE
IMPACT
TRANSISTORS
CMOS
DECANANOMETER
INTEGRATION
MOBILITY
Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs
期刊论文
ieee 纳米技术汇刊, 2011
Yang, Yunxiang
;
Yu, Shimeng
;
Zeng, Lang
;
Du, Gang
;
Kang, Jinfeng
;
Zhao, Yuning
;
Han, Ruqi
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Dopant-segregated Schottky MOSFETs (DSS-MOSFETs)
line edge roughness (LER)
Schottky barrier (SB)
technology computer-aided design (TCAD) simulation
variations
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
BARRIER
DECANANOMETER
IMPACT
Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs
期刊论文
ieee电子器件汇刊, 2010
Yu, Tao
;
Wang, Runsheng
;
Huang, Ru
;
Chen, Jiang
;
Zhuge, Jing
;
Wang, Yangyuan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Intrinsic parameter fluctuation
line-edge roughness (LER)
silicon nanowire MOSFET (SNWT)
variability
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
CARRIER TRANSPORT
CMOS TECHNOLOGY
IMPACT
TRANSISTORS
DEVICES
DECANANOMETER
VARIABILITY
INTEGRATION
Variability in Nano-scale Intrinsic Silicon-on-Thin-Box MOSFETs (SOTB MOSFETs)
其他
2010-01-01
Yang, Yunxiang
;
Du, Gang
;
Han, Ruqi
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
Intrinsic channel
SOTB
variability
intrinsic parameter fluctuations
ground plane
variability aware design
TCAD
THRESHOLD VOLTAGE
PARAMETER FLUCTUATIONS
SOI MOSFETS
DECANANOMETER
Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors
期刊论文
ieee电子器件汇刊, 2009
Yu, Shimeng
;
Zhao, Yuning
;
Zeng, Lang
;
Du, Gang
;
Kang, Jinfeng
;
Han, Ruqi
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
FinFETs
line-edge roughness (LER)
parameter fluctuations
process variations
Schottky-barrier field-effect transistors (SBFETs)
SRAM stability
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
YTTERBIUM SILICIDE
SRAM CELLS
MOSFETS
SOURCE/DRAIN
SIMULATION
DEVICES
DECANANOMETER
STABILITY
Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics
期刊论文
应用物理学快报, 2009
Zhuge, Jing
;
Zhang, Liangliang
;
Wang, Runsheng
;
Huang, Ru
;
Kim, Dong-Won
;
Park, Donggun
;
Wang, Yangyuan
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/10
Coulomb blockade
elemental semiconductors
field effect transistors
nanoelectronics
nanowires
semiconductor device noise
silicon
FIELD-EFFECT TRANSISTORS
SIMULATION
DECANANOMETER
MOSFETS
ENERGY
3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs
其他
2008-01-01
Yu, Shimeng
;
Zhao, Yuning
;
Song, Yuncheng
;
Du, Gang
;
Kang, Jinfeng
;
Han, Ruqi
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
LINE-EDGE ROUGHNESS
INTRINSIC PARAMETER FLUCTUATIONS
MOSFETS
GATE
DECANANOMETER
DEVICES
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