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CORC

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Point defects in group III nitrides: A comparative first-principles study 期刊论文
JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 125
作者:  Gao, Yinlu;  Sun, Dan;  Jiang, Xue;  Zhao, Jijun
收藏  |  浏览/下载：81/0  |  提交时间：2019/12/02
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian
收藏  |  浏览/下载：2/0  |  提交时间：2019/09/17
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: Vol.64 No.8, 页码: 3139-3144
作者:  Li, Y;  Guo, YX;  Zhang, K;  Zou, XM;  Wang, JL
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31
Positive Shift in Threshold Voltage Induced by CuO and NiOₓ Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 页码: 1-6
作者:  Yi Li;  Yaxiong Guo;  Kai Zhang;  Xuming Zou;  Jingli Wang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/31
GaN light-emitting diodes with an Al-coated graphene layer as a transparent electrode 期刊论文
http://dx.doi.org/10.7567/APEX.7.082103, 2014
Xu, Qiang; Yang, Muchuan; Cheng, Qijin; Zhong, Jinxiang; Wu, Shaoxiong; Zhang, Zifeng; Cai, Weiwei; Zhang, Fengyan; Wu, Zhengyun; 程其进; 蔡伟伟; 张风燕; 吴正云
收藏  |  浏览/下载：6/0  |  提交时间：2015/07/22
Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录) 期刊论文
Electronics Letters, 2014, 卷号: 50, 页码: 1980-1982
作者:  Liu, Jingqian[1];  Wang, Jinyan[1];  Xu, Zhe[1];  Jiang, Haisang[1];  Yang, Zhenchuan[1]
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/25
AlGaN Channel HEMT With Extremely High Breakdown Voltage 期刊论文
Electron Devices, IEEE Transactions on, 2013, 卷号: Vol.60 No.3, 页码: 1046-1053
作者:  Nanjo,T.;  Suita,M.;  Imai,A.;  Oishi,T.;  Suzuki,Y.
收藏  |  浏览/下载：9/0  |  提交时间：2020/01/04
Fabrication and characterization of aluminum-doped zinc oxide Schottky diodes on n-GaN 期刊论文
CURRENT APPLIED PHYSICS, 2012, 卷号: 12, 期号: 6
作者:  Liu, C.
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05
Growth of gan film on si (111) substrate using aln sandwich structure as buffer 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan, Xu;  Wei, Meng;  Yang, Cuibai;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：42/0  |  提交时间：2019/05/12

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