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	Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录)
	Liu, Jingqian[1]; Wang, Jinyan[1]; Xu, Zhe[1]; Jiang, Haisang[1]; Yang, Zhenchuan[1]; Wang, Maojun[1]; Yu, Min[1]; Xie, Bing[1]; Wu, Wengang[1]; Ma, Xiaohua[2]
刊名	Electronics Letters
	2014
卷号	50页码:1980-1982
关键词	Aluminum Aluminum gallium nitride Field effect transistors Gallium nitride MOS devices MOSFET devices Oxidation Oxidation resistance Potassium hydroxide X ray photoelectron spectroscopy
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2217146
专题	华南理工大学
作者单位	1.[1] Institute of Microelectronics, Peking University, Beijing, China 2.[2] Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an, China
推荐引用方式 GB/T 7714	Liu, Jingqian[1],Wang, Jinyan[1],Xu, Zhe[1],等. Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录)[J]. Electronics Letters,2014,50:1980-1982.
APA	Liu, Jingqian[1].,Wang, Jinyan[1].,Xu, Zhe[1].,Jiang, Haisang[1].,Yang, Zhenchuan[1].,...&Hao, Yue[2].(2014).Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录).Electronics Letters,50,1980-1982.
MLA	Liu, Jingqian[1],et al."Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录)".Electronics Letters 50(2014):1980-1982.

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