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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Two-dimensional analytical model for asymmetric dual-gate tunnel FETs 期刊论文 Japanese Journal of Applied Physics, 2017, 卷号: Vol.56 No.1, 页码: 014301 作者:  Zhang,Yong Feng;  Guan,Bang Gui;  Xu,Hui Fang;  Dai,Yue Hua 收藏  |  浏览/下载：6/0  |  提交时间：2019/04/22 COMPACT ANALYTICAL-MODEL  FIELD-EFFECT TRANSISTORS  2-D ANALYTICAL-MODEL  DRAIN CURRENT MODEL  THRESHOLD VOLTAGE  SUBTHRESHOLD REGION  TFET  PERFORMANCE  BARRIER  SCALABILITY   Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs 期刊论文 ieee电子器件汇刊, 2013 Li, Cong; Zhuang, Yiqi; Di, Shaoyan; Han, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 2-D analytical model  cylindrical surrounding-gate (CSG)  junctionless (JL) transistor  short-channel effects  subthreshold current  FIELD-EFFECT TRANSISTORS  THRESHOLD VOLTAGE  CHARGE   FinFET器件的集约阈电压模型(英文) 期刊论文 2010, 2010 张大伟; 田立林; 余志平; Zhang Dawei; Tian Lilin; Yu Zhiping 收藏  |  浏览/下载：3/0 A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs 期刊论文 2010, 2010, OCT Zhang, DW; Zhang, H; Yu, ZP; Tian, LL 收藏  |  浏览/下载：2/0  |  提交时间：2017/06/15 decanano-scaled MOSFETs  2D-QM effects  GCS approach  QM effects in poly-gates  unified analytical charge model  DEEP-SUBMICROMETER MOSFETS  Engineering, Electrical & Electronic  Physics, Applied  Physics, Condensed Matter   Compact threshold voltage model for FinFETs 期刊论文 2010, 2010 Zhang Dawei; Tian Lilin; Yu Zhiping 收藏  |  浏览/下载：6/0