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CORC

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Size-Dependent Selectivity of Electrochemical CO2 Reduction on Converted In2O3 Nanocrystals 期刊论文
Angew. Chem. Int. Ed., 2021, 卷号: 2021, 期号: 60, 页码: 15844
作者:  Yang Huang;  Xinnan Mao;  Guotao Yuan;  Duo Zhang;  Binbin Pan
收藏  |  浏览/下载：15/0  |  提交时间：2021/12/01
Guidelines for the use and interpretation of assays for monitoring autophagy (4th edition) 期刊论文
AUTOPHAGY, 2021, 卷号: 17
作者:  Klionsky, Daniel J.;  Abdel-Aziz, Amal Kamal;  Abdelfatah, Sara;  Abdellatif, Mahmoud;  Abdoli, Asghar
收藏  |  浏览/下载：267/0  |  提交时间：2021/05/31
Electrical Properties of MoS2-Au Contact Based on the First Principle Study 会议论文
作者:  Wu, Gengshu;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates 会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:  Lou, Haijun;  Li, Wentao;  Yang, Yumei;  Lin, Xinnan
收藏  |  浏览/下载：2/0  |  提交时间：2020/11/15
Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 5, 页码: 1873-1879
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter 会议论文
作者:  He, Hongyu;  Liu, Yuan;  Wang, Hao;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/05
Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 会议论文
9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Shenzhen, PEOPLES R CHINA, NOV 16-18, 2018
作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27
Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/15
Compact Model for Double-Gate Tunnel FETs with Gate-Drain Underlap 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan
收藏  |  浏览/下载：0/0  |  提交时间：2020/11/14

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