Electrical Properties of MoS2-Au Contact Based on the First Principle Study

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	Electrical Properties of MoS2-Au Contact Based on the First Principle Study
	Wu, Gengshu 1; Lou, Haijun 2,3; Lin, Xinnan 1
	2019
关键词	Metal/molybdenum disulphide (MoS2) contacts Schottky harrier height (SBH) ab initio
英文摘要	In this paper, the characteristics of top and edge contact of MoS2-Au interface are studied and compared in both equilibrium and non-equilibrium states based on the density functional theory (DFT) and non-equilibrium Green's function transport theory (NEGF). Van der waals(vdW) interaction is considered in top contact. It is found that the current of edge contact is an order of magnitude larger than top contact at the same width. The density of states(DOS) of atoms in top contact have little relationship with position while it is closely related in edge contact due to more orbital overlaps. In the non equilibrium state, the tunneling probability of the top contact increases after 0.517 while a peak of conductance at 0.22V is observed in edge contact because of sharpen Schottky barrier width. The results will provide a useful guide to design the novel MoS2 semiconductor devices.
会议录	2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
会议录出版者	IEEE
会议录出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
语种	英语
资助项目	Shenzhen Key Laboratory Project[ZDSYS 201703031405137]
WOS研究方向	Computer Science
WOS记录号	WOS:000483036000120
内容类型	会议论文
源URL	[http://119.78.100.223/handle/2XXMBERH/36114]
专题	兰州理工大学
通讯作者	Lou, Haijun
作者单位	1.PKUSZ, ECE, Shenzhen Key Lab Adv Electron Device & Integrat, Shenzhen, Peoples R China 2.Zhejiang Univ, Res Ctr MicroSatellite, Hangzhou, Zhejiang, Peoples R China 3.Lanzhou Univ Technol, Sch Sci, Lanzhou, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Wu, Gengshu,Lou, Haijun,Lin, Xinnan. Electrical Properties of MoS2-Au Contact Based on the First Principle Study[C]. 见:.