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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition) 期刊论文 AUTOPHAGY, 2016, 卷号: 12, 期号: 1, 页码: 1-222 作者:  Klionsky, DJ;  Abdelmohsen, K;  Abe, A;  Abedin, MJ;  Abeliovich, H 收藏  |  浏览/下载：97/0  |  提交时间：2017/01/10 autolysosome  autophagosome  chaperone-mediated autophagy  flux  LC3  lysosome  macroautophagy  phagophore  stress  vacuole   The sequence and de novo assembly of the giant panda genome 期刊论文 Nature, 2010, 卷号: 463, 期号: 7279, 页码: 311-317 Li RQ; Fan W; Tian G; Zhu HM; He L; Cai J; Huang QF; Cai QL; Li B; Bai YQ; Zhang ZH; Zhang YP; Wang W; Li J; Wei FW; Li H; Jian M; Li JW; Zhang ZL; Nielsen R; Li DW; Gu WJ; Yang ZT; Xuan ZL; Ryder OA; Leung FCC; Zhou Y; Cao JJ; Sun X; Fu YG; Fang XD; Guo XS; Wang B; Hou R; Shen FJ; Mu B; Ni PX; Lin RM; Qian WB; Wang GD; Yu C; Nie WH; Wang JH; Wu ZG; Liang HQ; Min JM; Wu Q; Cheng SF; Ruan J; Wang MW; Shi ZB; Wen M; Liu BH; Ren XL; Zheng HS; Dong D; Cook K; Shan G; Zhang H; Kosiol C; Xie XY; Lu ZH; Zheng HC; Li YR; Steiner CC; Lam TTY; Lin SY; Zhang QH; Li GQ; Tian J; Gong TM; Liu HD; Zhang DJ; Fang L; Ye C; Zhang JB; Hu WB; Xu AL; Ren YY; Zhang GJ; Bruford MW; Li QB; Ma LJ; Guo YR; An N; Hu YJ; Zheng Y; Shi YY; Li ZQ; Liu Q; Chen YL; Zhao J; Qu N; Zhao SC; Tian F; Wang XL; Wang HY; Xu LZ; Liu X; Vinar T; Wang YJ; Lam TW; Yiu SM; Liu SP; Zhang HM; Li DS; Huang Y; Wang X; Yang GH; Jiang Z; Wang JY; Qin N; Li L; Li JX; Bolund L; Kristiansen K; Wong GKS; Olson M; Zhang XQ; Li SG; Yang HM; Wang J; Wang J 收藏  |  浏览/下载：212/0  |  提交时间：2015/07/09 Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文 Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Gan  Low-frequency noise  Deep levels  Deep level transient fourier spectroscopy   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK 收藏  |  浏览/下载：343/96  |  提交时间：2010/03/09 GaN   Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Deep level transient fourier spectroscopy  (dltfs)  Gallium nitride (gan)  Intermediate-temperature buffer layer (itbf)  Low-frequency noise   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES   Study of gan thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy 期刊论文 Journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104 作者:  Lu, LW;  Fong, WK;  Zhu, CF;  Leung, BH;  Surya, C 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Characterization  Molecular beam epitaxy  Semiconducting materials   Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy 期刊论文 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104 Lu LW; Fong WK; Zhu CF; Leung BH; Surya C; Wang J; Ge WK 收藏  |  浏览/下载：100/14  |  提交时间：2010/08/12 characterization  molecular beam epitaxy  semiconducting materials  STRAIN