Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

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	Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
	Lu LW ; Fong WK ; Zhu CF ; Leung BH ; Surya C ; Wang J ; Ge WK
刊名	journal of crystal growth
	2002
卷号	234 期号:1 页码:99-104
关键词	characterization molecular beam epitaxy semiconducting materials STRAIN
ISSN号	0022-0248
通讯作者	lu lw,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	a detailed characterisation study of gan thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (itbl) was carried out with hall, photoluminescence (pl) and deep-level transient fourier spectroscopy (dltfs) techniques. the unique feature of our gan thin films is that the gan epitaxial layers are grown on top of a double layer that consists of an itbl, which is grown at 690 degreesc, and a conventional low-temperature buffer layer deposited at 500 degreesc. it is observed that the electron mobility increases steadily with the thickness of the itbl, which peaks at 377 cm(2)v(-1)s(-1) for an itbl thickness of 800 nm. the pl also demonstrated systematic improvements with the thickness of the itbl. the dltfs results suggest a three-order-of-magnitude reduction in the deep level at e-c-0.40 ev in the device fabricated with the gan films grown on an itbl thickness of 1.25 mum in comparison with the control device without an itbl. our analyses indicate that the utilization of an itbl in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (c) 2002 elsevier science bn. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12040]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Fong WK,Zhu CF,et al. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy[J]. journal of crystal growth,2002,234(1):99-104.
APA	Lu LW.,Fong WK.,Zhu CF.,Leung BH.,Surya C.,...&Ge WK.(2002).Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy.journal of crystal growth,234(1),99-104.
MLA	Lu LW,et al."Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy".journal of crystal growth 234.1(2002):99-104.