Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

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	Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
	Leung, BH ; Fong, WK ; Surya, C ; Lu, LW ; Ge, WK
刊名	materials science in semiconductor processing
	2003
卷号	6 期号:5-6 页码:523-525
关键词	GaN
ISSN号	1369-8001
通讯作者	surya, c, hong kong polytech univ, photon res ctr, dept elect & informat engn, hong kong, hong kong, peoples r china. 电子邮箱地址: ensurya@polyu.edu.hk
中文摘要	metal-semiconductor-metal (msm) structures were fabricated by rf-plasma-assisted mbe using different buffer layer structures. one type of buffer structure consists of an aln high-temperature buffer layer (htbl) and a gan intermediate temperature buffer layer (itbl), another buffer structure consists of just a single a in htbl. systematic measurements in the flicker noise and deep level transient fourier spectroscopy (dltfs) measurements were used to characterize the defect properties in the films. both the noise and dltfs measurements indicate improved properties for devices fabricated with the use of itbl and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (c) 2003 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8118]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Leung, BH,Fong, WK,Surya, C,et al. Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers[J]. materials science in semiconductor processing,2003,6(5-6):523-525.
APA	Leung, BH,Fong, WK,Surya, C,Lu, LW,&Ge, WK.(2003).Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers.materials science in semiconductor processing,6(5-6),523-525.
MLA	Leung, BH,et al."Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers".materials science in semiconductor processing 6.5-6(2003):523-525.