×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
西安交通大学 [15]
内容类型
期刊论文 [8]
会议论文 [7]
发表日期
2018 [1]
2017 [7]
2016 [2]
2015 [2]
2014 [3]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共15条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
提交时间升序
提交时间降序
题名升序
题名降序
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
会议论文
作者:
Cui, Miao
;
Cai, Yutao
;
Lam, Sang
;
Liu, Wen
;
Zhao, Chun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Frequency dependence
Frequency independent
High-voltage switching
Metal-insulator-semiconductors
MIS-HEMT
Threshold voltage shifts
Voltage hysteresis
Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing
会议论文
作者:
Lu, Qifeng
;
Zhao, Ce Zhou
;
Zhao, Chun
;
Taylor, Steve
;
Chalker, Paul R.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
MOS
Zr(NMe2)(4)
Anomalous capacitance-voltage
Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs
会议论文
作者:
Liu, Qifeng
;
Lam, Sang
;
Mu, Yifei
;
Zhao, Ce Zhou
;
Zhao, Yinchao
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/11/26
Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices
会议论文
作者:
Lu, Qifeng
;
Qi, Yanfei
;
Zhao, Ce Zhou
;
Zhao, Chun
;
Taylor, Stephen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
Capacitance-voltage characteristics
High-k dielectrics
Pulse technique
Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics
期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2017, 卷号: 17, 页码: 526-530
作者:
Lu, Qifeng
;
Qi, Yanfei
;
Zhao, Ce Zhou
;
Liu, Chenguang
;
Zhao, Chun
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/11/26
deposition temperature
Capacitance-voltage characteristics
interface dipoles
annealing condition
Effects of Biased Irradiation on Charge Trapping in HfO2 Dielectric Thin Films
会议论文
作者:
Mu, Yifei
;
Zhao, Ce Zhou
;
Lu, Qifeng
;
Zhao, Chun
;
Qi, Yanfei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
HfO2
Thin Films
Charge Trapping
Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2913-2921
作者:
Mu, Yifei
;
Fang, Yuxiao
;
Zhao, Ce Zhou
;
Zhao, Chun
;
Lu, Qifeng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
germanium
HfxZr1-xOy
interface traps
total dose effect
oxide trapped charges
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 673-682
作者:
Mu, Yifei
;
Zhao, Ce Zhou
;
Lu, Qifeng
;
Zhao, Chun
;
Qi, Yanfei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
gamma irradiation
ALD
hafnium oxide
low-dose-rate
oxide trapped charges
pulse CV
Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 卷号: 372, 期号: [db:dc_citation_issue], 页码: 14-28
作者:
Mu, Yifei
;
Zhao, Ce Zhou
;
Qi, Yanfei
;
Lam, Sang
;
Zhao, Chun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
Real-time I-V/C-V test
High-kappa dielectrics
Total-dose induced defects
HfO2
On-site radiation response
Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics
会议论文
作者:
Lu, Qifeng
;
Qi, Yanfei
;
Zhao, Ce Zhou
;
Zhao, Chun
;
Taylor, Stephen
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
capacitance-voltage characteristics
interface dipoles
hysteresis
©版权所有 ©2017 CSpace - Powered by
CSpace