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	Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films
	Mu, Yifei; Fang, Yuxiao; Zhao, Ce Zhou; Zhao, Chun; Lu, Qifeng; Qi, Yanfei; Yi, Ruowei; Yang, Li; Mitrovic, Ivona Z.; Taylor, Stephen
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2017
卷号	64页码:2913-2921
关键词	germanium HfxZr1-xOy interface traps total dose effect oxide trapped charges
ISSN号	0018-9499
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2949769
专题	西安交通大学
推荐引用方式 GB/T 7714	Mu, Yifei,Fang, Yuxiao,Zhao, Ce Zhou,et al. Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2017,64:2913-2921.
APA	Mu, Yifei.,Fang, Yuxiao.,Zhao, Ce Zhou.,Zhao, Chun.,Lu, Qifeng.,...&Chalker, Paul R..(2017).Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,64,2913-2921.
MLA	Mu, Yifei,et al."Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 64(2017):2913-2921.

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