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Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices 期刊论文
MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 期号: 11, 页码: 1-5
作者:  Xi, K (Xi, K.)[ 1 ];  Bi, JS (Bi, J. S.)[ 1,2 ];  Xu, YN (Xu, Y. N.)[ 1 ];  Li, YD (Li, Y. D.)[ 3 ];  Zhang, ZG (Zhang, Z. G.)[ 4 ]
收藏  |  浏览/下载：24/0  |  提交时间：2021/01/05
The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 期号: 9, 页码: 1-5
作者:  Xu, YN (Xu, Yannan)[ 1,2 ];  Bi, JS (Bi, Jinshun)[ 1,2 ];  Li, YD (Li, Yudong)[ 3 ];  Xi, K (Xi, Kai)[ 1 ];  Fan, LJ (Fan, Linjie)[ 4 ]
收藏  |  浏览/下载：10/0  |  提交时间：2020/01/19
Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory 期刊论文
Chinese physics B, 2018
作者:  Bi JS(毕津顺);  Xi K(习凯);  Li B(李博);  Wang HB(王海滨);  Ji LL(季兰龙)
收藏  |  浏览/下载：25/0  |  提交时间：2019/04/12
Impact of γ-ray irradiation on graphene nano-disc non-volatile memory 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Xi K(习凯);  Bi JS(毕津顺);  Hu Y(胡媛);  Li B(李博);  Liu J(刘璟)
收藏  |  浏览/下载：22/0  |  提交时间：2019/04/12
A Single Event Upset Tolerant Latch Design 会议论文
作者:  Haibin Wang;  Xixi Dai;  Yangsheng Wang;  Issam Nofal;  Li Cai
收藏  |  浏览/下载：36/0  |  提交时间：2019/05/13
Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3 (AHA)-based Charge Trapping Memory (CTM) Cell 期刊论文
Chinese Physics Letters, 2018
作者:  Xu YN(徐彦楠);  Bi JS(毕津顺);  Xu GB(许高博);  Li B(李博);  Xi K(习凯)
收藏  |  浏览/下载：21/0  |  提交时间：2019/04/18
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive random access memory 期刊论文
MICROELECTRONICS RELIABILITY, 2018
作者:  Bi JS(毕津顺);  Yuan Duan;  Xi K(习凯);  Li B(李博)
收藏  |  浏览/下载：12/0  |  提交时间：2019/04/12
Characteristics of PM2.5 mass concentrations and chemical species in urban and background areas of China: emerging results from the CARE-China network 期刊论文
ATMOSPHERIC CHEMISTRY AND PHYSICS, 2018, 卷号: 18, 期号: 12, 页码: 8849-8871
作者:  Sun, Y (Sun, Yang);  Liu, ZR (Liu, Zirui);  Gao, WK (Gao, Wenkang);  Yu, YC (Yu, Yangchun);  Hu, B (Hu, Bo)
收藏  |  浏览/下载：81/0  |  提交时间：2019/06/04
The dependence of single event effect on heavy ion angular irradiation by Geant4 simulation 会议论文
作者:  Li B(李博);  Guo S(郭硕);  Hao L(郝乐);  Bi JS(毕津顺);  Luo JJ(罗家俊)
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/10
Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge 期刊论文
CHIN. PHYS. LETT., 2018
作者:  Bi JS(毕津顺);  Xu YN(徐彦楠);  Li B(李博);  Xi K(习凯);  Wang HB(王海滨)
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/12

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