Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices
Xi, K (Xi, K.)[ 1 ]; Bi, JS (Bi, J. S.)[ 1,2 ]; Xu, YN (Xu, Y. N.)[ 1 ]; Li, YD (Li, Y. D.)[ 3 ]; Zhang, ZG (Zhang, Z. G.)[ 4 ]; Liu, M (Liu, M.)[ 1,2 ]
刊名MICROELECTRONICS RELIABILITY
2020
卷号114期号:11页码:1-5
ISSN号0026-2714
DOI10.1016/j.microrel.2020.113882
英文摘要

The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before Xray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation.

WOS记录号WOS:000593889100012
内容类型期刊论文
源URL[http://ir.xjipc.cas.cn/handle/365002/7697]  
专题固体辐射物理研究室
作者单位1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys Chem, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Sch Microelect, Beijing 100029, Peoples R China
4.Chinese Acad Sci, Inst Microelect, Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
推荐引用方式
GB/T 7714
Xi, K ,Bi, JS ,Xu, YN ,et al. Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices[J]. MICROELECTRONICS RELIABILITY,2020,114(11):1-5.
APA Xi, K ,Bi, JS ,Xu, YN ,Li, YD ,Zhang, ZG ,&Liu, M .(2020).Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices.MICROELECTRONICS RELIABILITY,114(11),1-5.
MLA Xi, K ,et al."Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices".MICROELECTRONICS RELIABILITY 114.11(2020):1-5.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace