Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices

doi:10.1016/j.microrel.2020.113882

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 固体辐射物理研究室

	Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices
	Xi, K (Xi, K.)[ 1 ]; Bi, JS (Bi, J. S.)[ 1,2 ]; Xu, YN (Xu, Y. N.)[ 1 ]; Li, YD (Li, Y. D.)[ 3 ]; Zhang, ZG (Zhang, Z. G.)[ 4 ]; Liu, M (Liu, M.)[ 1,2 ]
刊名	MICROELECTRONICS RELIABILITY
	2020
卷号	114 期号:11 页码:1-5
ISSN号	0026-2714
DOI	10.1016/j.microrel.2020.113882
英文摘要	The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before Xray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation.
WOS记录号	WOS:000593889100012
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7697]
专题	固体辐射物理研究室
作者单位	1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys Chem, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Sch Microelect, Beijing 100029, Peoples R China 4.Chinese Acad Sci, Inst Microelect, Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
推荐引用方式 GB/T 7714	Xi, K ,Bi, JS ,Xu, YN ,et al. Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices[J]. MICROELECTRONICS RELIABILITY,2020,114(11):1-5.
APA	Xi, K ,Bi, JS ,Xu, YN ,Li, YD ,Zhang, ZG ,&Liu, M .(2020).Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices.MICROELECTRONICS RELIABILITY,114(11),1-5.
MLA	Xi, K ,et al."Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices".MICROELECTRONICS RELIABILITY 114.11(2020):1-5.