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| 确定GaN异质结场效应晶体管栅下势垒层应变的方法 专利 申请日期: 2014-03-26, 公开日期: 2014-03-26 作者: 林兆军; 赵景涛; 栾崇彪; 吕元杰; 杨铭
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:1/0  |  提交时间:2020/01/04 |
| 确定GaN异质结场效应晶体管栅下势垒层应变的方法 专利 申请日期: 2014-03-26, 公开日期: 2014-03-26 作者: 林兆军; 赵景涛; 栾崇彪; 吕元杰; 杨铭
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:1/0  |  提交时间:2020/01/04 |
| Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes 期刊论文 中国物理B(英文版), 2014, 期号: 2, 页码: 426-430 作者: Lv YJ(吕元杰); Feng ZH(冯志红); Gu GD(顾国栋); Dun SB(敦少博); Yin JY(尹甲运)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
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| Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文 中国物理B, 2014, 卷号: 23, 期号: 4, 页码: 521-524 作者: Yu YX(于英霞); Lin ZJ(林兆军); Luan CB(栾崇彪); Lv YJ(吕元杰); Feng ZH(冯志红)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:1/0  |  提交时间:2019/12/17
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| The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 期号: 12, 页码: 52-56 作者: Yu YX(于英霞); Lin ZJ(林兆军); Lv YJ(吕元杰); Feng ZH(冯志红); Luan CB(栾崇彪)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
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| Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 期号: 12, 页码: 32-35 作者: Zhao JT(赵景涛); Lin ZJ(林兆军); Luan CB(栾崇彪); Yang M(杨铭); Zhou Y(周阳)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:2/0  |  提交时间:2019/12/17
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| Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 期刊论文 Chinese Physics B, 2014, 期号: 02, 页码: 430-434 作者: Lv YJ(吕元杰); Feng ZH(冯志红); Gu GD(顾国栋); Dun SB(敦少博); Yin JY(尹甲运)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:4/0  |  提交时间:2019/12/17
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| Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 期号: 09, 页码: 69-74 作者: Luan CB(栾崇彪); Lin ZJ(林兆军); Lv YJ(吕元杰); Feng ZH(冯志红); Zhao JT(赵景涛)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
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| Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_(0.18) Al_(0.82) N/AlN/GaN heterostructure field-effect transistors 期刊论文 Chinese Physics B, 2014, 期号: 04, 页码: 521-524 作者: Yu YX(于英霞); Lin ZJ(林兆军); Luan CB(栾崇彪); Lv YJ(吕元杰); Feng ZH(冯志红)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:2/0  |  提交时间:2019/12/17
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| Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors 期刊论文 中国物理B:英文版, 2014, 期号: 04, 页码: 517-520 作者: 于英霞[1]; 林兆军[1]; 栾崇彪[1]; 吕元杰[2]; 冯志红[2]
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:2/0  |  提交时间:2019/12/17
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