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	Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
	Zhao JT(赵景涛); Lin ZJ(林兆军); Luan CB(栾崇彪); Yang M(杨铭); Zhou Y(周阳); Lv YJ(吕元杰); Feng ZH(冯志红)
刊名	Journal of Semiconductors
	2014
期号	12页码:32-35
关键词	side-ohmic contact AlN/GaN heterostructure field effect transistor
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4798933
专题	山东大学
作者单位	1.School of Physics, Shandong University 2.National Key Labora
推荐引用方式 GB/T 7714	Zhao JT,Lin ZJ,Luan CB,et al. Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. Journal of Semiconductors,2014(12):32-35.
APA	Zhao JT.,Lin ZJ.,Luan CB.,Yang M.,Zhou Y.,...&Feng ZH.(2014).Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors.Journal of Semiconductors(12),32-35.
MLA	Zhao JT,et al."Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors".Journal of Semiconductors .12(2014):32-35.

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