| Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors | |
| Luan CB(栾崇彪); Lin ZJ(林兆军); Lv YJ(吕元杰); Feng ZH(冯志红); Zhao JT(赵景涛); Zhou Y(周阳); Yang M(杨铭) | |
| 刊名 | Journal of Semiconductors
 |
| 2014 | |
| 期号 | 09页码:69-74 |
| 关键词 | III–V nitride and AlGaAs/GaAs HFETs polarization Coulomb field scattering 2DEG electron mobility |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4804211 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Physics, Shandong University 2.National Key Labora |
| 推荐引用方式 GB/T 7714 | Luan CB,Lin ZJ,Lv YJ,et al. Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors[J]. Journal of Semiconductors,2014(09):69-74. |
| APA | Luan CB.,Lin ZJ.,Lv YJ.,Feng ZH.,Zhao JT.,...&Yang M.(2014).Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors.Journal of Semiconductors(09),69-74. |
| MLA | Luan CB,et al."Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors".Journal of Semiconductors .09(2014):69-74. |
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