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湖南大学 [7]
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新疆理化技术研究所 [1]
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期刊论文 [9]
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Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Online junction temperature estimation method for SiC modules with built-in NTC sensor
期刊论文
CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99
作者:
Ping Liu
;
Changle Chen
;
Xing Zhang
;
Shoudao Huang
收藏
  |  
浏览/下载:102/0
  |  
提交时间:2019/12/13
Silicon carbide
Junctions
MOSFET
Temperature sensors
Impedance
Heating systems
Mathematical model
Boundary conditions
junction temperature
silicon carbide (SiC)
thermal model.
Carrier-Based Double Integral Sliding-Mode Controller of Class-D Amplifier
期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 1275-1283
作者:
Xiaohua Wu
;
Haider Zaman
;
Xiancheng Zheng
;
Shahbaz Khan
;
Husan Ali
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/13
Mathematical
model
Frequency
response
Q-factor
Control
systems
Switching
frequency
Silicon
carbide
Voltage
control
Carrier-based
double
integral
sliding-mode
(CBDISM)
class-D
amplifier
Q-factor
SiC
MOSFET
Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:
Jun Wang
;
Xi Jiang
;
Zongjian Li
;
Z. John Shen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
MOSFET
Silicon carbide
Logic gates
Insulated gate bipolar transistors
Switches
Leakage currents
Silicon
Failure analysis
gate control
hybrid switch (HyS)
IGBT
short-circuit (SC)
Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
Z. John Shen
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/13
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Gate
control
hybrid
switch
IGBT
junction
temperature
mosfet
power
loss
SiC
Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:
Wang, J
;
Jiang, X
;
Li, ZJ
;
Shen, ZJ
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/17
Failure analysis
gate control
hybrid switch (HyS)
IGBT
short-circuit (SC)
Silicon Carbide (SiC) MOSFET
Review of SiC MOSFET Drive Circuit
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Liu, Yang
;
Yang, Yuan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/20
Silicon Carbide (SiC) devices
Switching characteristics
drive circuit
A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
期刊论文
2019, 卷号: 34, 页码: 7775-7787
作者:
Yang, Yuan
;
Wen, Yang
;
Gao, Yong
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/20
Active gate driver (AGD)
electromagnetic interference (EMI)
silicon carbide (SiC) MOSFET
overshoots
An Active Gate Driver for Improving Switching Performance of SiC MOSFET
会议论文
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018-01-01
作者:
Yang, Yuan
;
Wang, Yan
;
Wen, Yang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Silicon Carbide (SiC) devices
overvoltage
switching losses
An active gate driver (AGD)
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2018, 页码: 1
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
John Shen GAE
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/26
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Hybrid
switch
SiC
MOSFET
IGBT
gate
control
power
loss
junction
temperature
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