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Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:  Shih, Yu-Chuan;  Lee, Ling;  Liang, Kai-De;  Manikandan, Arumugam;  Liu, Wen-Wu
收藏  |  浏览/下载:5/0  |  提交时间:2021/03/12
Ultralow operation voltages of a transparent memristor based on bilayer ITO 期刊论文
APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 22
作者:  Wang, Yuchen;  Hu, Lingxiang;  Wei, Xianhua;  Zhuge, Fei
收藏  |  浏览/下载:28/0  |  提交时间:2020/12/16
A comprehensive investigation of MoO3 based resistive random access memory 期刊论文
RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345
作者:  Fatheema, Jameela;  Shahid, Tauseef;  Mohammad, Mohammad Ali;  Islam, Amjad;  Malik, Fouzia
收藏  |  浏览/下载:19/0  |  提交时间:2020/12/16
Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations 期刊论文
Applied Physics Letters, 2020, 卷号: 6, 期号: 16, 页码: 063503
作者:  Naifeng Li;  Yue Wang;  Haifeng Sun;  Junjie Hu;  Maoyuan Zheng
收藏  |  浏览/下载:52/0  |  提交时间:2020/11/30
Resistive Switching Behavior in Ferroelectric Heterostructures 期刊论文
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:  Wang, Zhan Jie;  Bai, Yu
收藏  |  浏览/下载:24/0  |  提交时间:2021/02/02
Resistive Switching Behavior in Ferroelectric Heterostructures 期刊论文
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:  Wang, Zhan Jie;  Bai, Yu
收藏  |  浏览/下载:21/0  |  提交时间:2021/02/02
Phase-change nanoclusters embedded in a memristor for simulating synaptic learning 期刊论文
NANOSCALE, 2019, 卷号: 11, 页码: 5684-5692
作者:  Wan, Qin;  Zeng, Fei
收藏  |  浏览/下载:76/0  |  提交时间:2019/12/30
Overwhelming coexistence of negative differential resistance effect and RRAM 期刊论文
Physical Chemistry Chemical Physics, 2018, 卷号: 20, 期号: 31, 页码: 20635-20640
作者:  Guo, T.;  Sun, B.;  Zhou, Y.;  Zhao, H. B.;  Lei, M.
收藏  |  浏览/下载:6/0  |  提交时间:2019/09/17
Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 37, 页码: 9799-9805
作者:  Chen, Guilin;  Zhang, Peng;  Pan, Lulu;  Qi, Lin;  Yu, Fucheng
收藏  |  浏览/下载:1/0  |  提交时间:2019/11/15
Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:  Su, Teng-Yu;  Huang, Chi-Hsin;  Shih, Yu-Chuan;  Wang, Tsang-Hsuan;  Medina, Henry
收藏  |  浏览/下载:0/0  |  提交时间:2019/11/15


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