A comprehensive investigation of MoO3 based resistive random access memory

doi:10.1039/d0ra03415k

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	A comprehensive investigation of MoO3 based resistive random access memory
	Fatheema, Jameela; Shahid, Tauseef; Mohammad, Mohammad Ali; Islam, Amjad; Malik, Fouzia; Akinwande, Deji; Rizwan, Syed
刊名	RSC ADVANCES
	2020
卷号	10 期号:33 页码:19337-19345
关键词	SWITCHING CHARACTERISTICS NONVOLATILE MEMORY LOW-POWER PERFORMANCE MECHANISMS SUBSTRATE DEVICES RRAM
DOI	10.1039/d0ra03415k
英文摘要	The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics. For the trilayered structure, the SET voltage lies around 3.3 V and RESET voltage is observed to be in the -2.3 V to -2.7 V range. The conduction mechanism has been observed and revealed for the Metal-Insulator-Metal (MIM) structure which is a space-charge-limited current mechanism that follows both ohmic conduction and Child's law. Furthermore, a theoretical study has been performed by using density functional theory (DFT) to evaluate the resistance switching role of molybdenum oxide (MoO3). The structure has been studied with oxygen vacancy sites induced into the system which shows the reduction in bandgap, whereas an indirect bandgap of 1.9 eV and a direct bandgap of 3.1 eV are calculated for molybdenum oxide. Conclusively, the formation of a conduction filament which is fundamental for resistive switching has been explained through band structure and density of states per eV for oxygen vacancy structures of molybdenum oxide. The current work presents an in-depth understanding of the resistive switching mechanism involved in MoO3 based resistive random access memory devices for future data storage applications.
学科主题	Chemistry
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20785]
专题	2020专题
作者单位	Rizwan, S (corresponding author), Natl Univ Sci & Technol NUST, Phys Characterizat & Simulat Lab, Dept Phys, Sch Nat Sci SNS, Islamabad 54000, Pakistan.
推荐引用方式 GB/T 7714	Fatheema, Jameela,Shahid, Tauseef,Mohammad, Mohammad Ali,et al. A comprehensive investigation of MoO3 based resistive random access memory[J]. RSC ADVANCES,2020,10(33):19337-19345.
APA	Fatheema, Jameela.,Shahid, Tauseef.,Mohammad, Mohammad Ali.,Islam, Amjad.,Malik, Fouzia.,...&Rizwan, Syed.(2020).A comprehensive investigation of MoO3 based resistive random access memory.RSC ADVANCES,10(33),19337-19345.
MLA	Fatheema, Jameela,et al."A comprehensive investigation of MoO3 based resistive random access memory".RSC ADVANCES 10.33(2020):19337-19345.