Ultralow operation voltages of a transparent memristor based on bilayer ITO

doi:10.1063/5.0008416

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Ultralow operation voltages of a transparent memristor based on bilayer ITO
	Wang, Yuchen ; Hu, Lingxiang ; Wei, Xianhua ; Zhuge, Fei
刊名	APPLIED PHYSICS LETTERS
	2020
卷号	116 期号:22
关键词	INDIUM-TIN-OXIDE PLASTICITY MECHANISMS MEMORIES
DOI	10.1063/5.0008416
英文摘要	Traditional memristors based on metal/insulator/metal sandwich structures generally require the operation voltages of several volts to switch the device between different resistance states. In this work, we report the ultralow set and reset voltages of 14mV and 0.3V in a simple bilayer device, respectively, which is composed of the widely used indium tin oxide (ITO) solely. Such low operation voltages might be ascribed to the synergistic effect of the loose porous structure in the upper ITO layer deposited by electron beam evaporation, the amorphous interface between two ITO layers, and the formation of an oxygen concentration gradient triggered by an initiation process. Based on the superior resistive switching properties of this kind bilayer device, synaptic functions and image memorization are achieved by applying ultralow electrical stimulus. The prototype device not only paves the way for simplifying the device structure and the fabrication process but also offers possibilities to develop transparent multifunctional devices with low power consumption.
学科主题	Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20760]
专题	2020专题
作者单位	1.Wei, XH (corresponding author), Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China. 2.Zhuge, F (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 3.Zhuge, F (corresponding author), Chinese Acad Sci, Ctr Excellence Brain Sci & Intelligence Technol, Shanghai 200031, Peoples R China.
推荐引用方式 GB/T 7714	Wang, Yuchen,Hu, Lingxiang,Wei, Xianhua,et al. Ultralow operation voltages of a transparent memristor based on bilayer ITO[J]. APPLIED PHYSICS LETTERS,2020,116(22).
APA	Wang, Yuchen,Hu, Lingxiang,Wei, Xianhua,&Zhuge, Fei.(2020).Ultralow operation voltages of a transparent memristor based on bilayer ITO.APPLIED PHYSICS LETTERS,116(22).
MLA	Wang, Yuchen,et al."Ultralow operation voltages of a transparent memristor based on bilayer ITO".APPLIED PHYSICS LETTERS 116.22(2020).