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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 19, 页码: 19
作者:  P.Steindl;  E.M.Sala;  B.Alen;  D.F.Marron;  D.Bimberg
收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24
Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires 期刊论文
NANO LETTERS, 2017, 卷号: 17, 期号: 3, 页码: 1545-1551
作者:  Chen XR;  Zhuang QD;  Alradhi H;  Jin ZM;  Zhu LQ
收藏  |  浏览/下载：63/0  |  提交时间：2018/11/20
A modified optics based technique for suppressing spurious signals in photoreflectance spectra 期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2017, 卷号: 88, 期号: 10, 页码: 106103
作者:  Zhang B;  Wang XJ
收藏  |  浏览/下载：12/0  |  提交时间：2018/11/20
Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance 期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32
作者:  Chen Xi-Ren[1];  Song Yu-Xin[2];  Zhu Liang-Qing[3];  Qi Zhen[4];  Zhu Liang[5]
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/30
The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness 期刊论文
http://dx.doi.org/10.1063/1.4884063, 2014
Wu, Po-Hung; Huang, Ying-Sheng; Hsu, Hung-Pin; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau; 李成
收藏  |  浏览/下载：4/0  |  提交时间：2015/07/22
Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy 期刊论文
http://dx.doi.org/10.1016/j.ssc.2013.04.035, 2013
Wu, P. H.; Huang, Y. S.; Hsu, H. P.; Li, C.; Huang, S. H.; Tiong, K. K.; 李成
收藏  |  浏览/下载：3/0  |  提交时间：2015/07/22
OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS 期刊论文
http://dx.doi.org/10.1142/S1793604713500215, 2013
Weng, Guo-En; Zhang, Bao-Ping; Liang, Ming-Ming; Lv, Xue-Qin; Zhang, Jiang-Yong; Ying, Lei-Ying; Qiu, Zhi Ren; Yaguchi, H.; Kuboya, S.; Onabe, K.; Chen, Shao-Qiang; Akiyama, H.; 张保平; 张江勇
收藏  |  浏览/下载：3/0  |  提交时间：2015/07/22
Photoreflectance Spectroscopy Characterization of Ge/Si016Ge084 Multiple Quantum Wells on Ge Virtual Substrate 期刊论文
http://dx.doi.org/10.1155/2013/298190, 2013
Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau; 李成
收藏  |  浏览/下载：3/0  |  提交时间：2015/07/22
Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 12
作者:  Li, YL;  Wang, XJ;  He, SM;  Zhang, B;  Sun, LX
收藏  |  浏览/下载：13/0  |  提交时间：2013/03/18
Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 12, 页码: -
作者:  
收藏  |  浏览/下载：22/0  |  提交时间：2013/11/07

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