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Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy
Wu, P. H. ; Huang, Y. S. ; Hsu, H. P. ; Li, C. ; Huang, S. H. ; Tiong, K. K. ; Li C(李成)
刊名http://dx.doi.org/10.1016/j.ssc.2013.04.035
2013
关键词HIGH-ELECTRON-MOBILITY TEMPERATURE-DEPENDENCE BULK GE SILICON PHOTOREFLECTANCE SUPERLATTICE TRANSISTOR
英文摘要National Science Council of Taiwan [NSC 100-2112-M-011-001-MY3, NSC 100-2221-E-131-005-MY2]; National Basic Research Program of China [2012CB933503]; National Natural Science Foundation of China [61036003, 61176092]; A Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure grown on a Ge-on-Si virtual substrate (Ge-VS) was characterized by using temperature dependent piezoreflectance (PzR) technique. Signals from every relevant portion of the sample, including Ge-VS, MQW and barriers were observed. The band gap blue-shifted and valence band splitting in the vicinity of the direct band-edge transitions of Ge revealed that the Ge-VS is compressively strained. A comprehensive analysis of the PzR spectra led to the identification of various quantum-confined interband transitions. In addition, the parameters that describe the temperature dependence of the excitonic transition energies were evaluated and found to be similar to that of the bulk Ge. (C) 2013 Elsevier Ltd. All rights reserved.
语种英语
出版者PERGAMON-ELSEVIER SCIENCE LTD
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/91868]  
专题物理技术-已发表论文
推荐引用方式
GB/T 7714
Wu, P. H.,Huang, Y. S.,Hsu, H. P.,et al. Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy[J]. http://dx.doi.org/10.1016/j.ssc.2013.04.035,2013.
APA Wu, P. H..,Huang, Y. S..,Hsu, H. P..,Li, C..,Huang, S. H..,...&李成.(2013).Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy.http://dx.doi.org/10.1016/j.ssc.2013.04.035.
MLA Wu, P. H.,et al."Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy".http://dx.doi.org/10.1016/j.ssc.2013.04.035 (2013).
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