Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy | |
Wu, P. H. ; Huang, Y. S. ; Hsu, H. P. ; Li, C. ; Huang, S. H. ; Tiong, K. K. ; Li C(李成) | |
刊名 | http://dx.doi.org/10.1016/j.ssc.2013.04.035
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2013 | |
关键词 | HIGH-ELECTRON-MOBILITY TEMPERATURE-DEPENDENCE BULK GE SILICON PHOTOREFLECTANCE SUPERLATTICE TRANSISTOR |
英文摘要 | National Science Council of Taiwan [NSC 100-2112-M-011-001-MY3, NSC 100-2221-E-131-005-MY2]; National Basic Research Program of China [2012CB933503]; National Natural Science Foundation of China [61036003, 61176092]; A Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure grown on a Ge-on-Si virtual substrate (Ge-VS) was characterized by using temperature dependent piezoreflectance (PzR) technique. Signals from every relevant portion of the sample, including Ge-VS, MQW and barriers were observed. The band gap blue-shifted and valence band splitting in the vicinity of the direct band-edge transitions of Ge revealed that the Ge-VS is compressively strained. A comprehensive analysis of the PzR spectra led to the identification of various quantum-confined interband transitions. In addition, the parameters that describe the temperature dependence of the excitonic transition energies were evaluated and found to be similar to that of the bulk Ge. (C) 2013 Elsevier Ltd. All rights reserved. |
语种 | 英语 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/91868] ![]() |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Wu, P. H.,Huang, Y. S.,Hsu, H. P.,et al. Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy[J]. http://dx.doi.org/10.1016/j.ssc.2013.04.035,2013. |
APA | Wu, P. H..,Huang, Y. S..,Hsu, H. P..,Li, C..,Huang, S. H..,...&李成.(2013).Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy.http://dx.doi.org/10.1016/j.ssc.2013.04.035. |
MLA | Wu, P. H.,et al."Characterization of Ge/Si016Ge084 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy".http://dx.doi.org/10.1016/j.ssc.2013.04.035 (2013). |
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