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High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14
作者:
Liu, Huan
;
Han, Genquan
;
Liu, Yan
;
Tang, Xiaosheng
;
Yang, Jingchen
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/13
Germanium
MOSFET
Amorphous Si passivation
Mobility
Surface orientation
Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 771-776
作者:
Hongguan Yang
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/13
Logic
gates
Threshold
voltage
Silicon
MOSFET
Transconductance
Nanoscale
devices
Double-layer
gate
structure
MOS
devices
short-channel
effect
silicon
nanowire
(Si-NW)
threshold
voltage
characteristics
High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
期刊论文
Nanoscale Research Letters, 2019, 卷号: Vol.14 No.1
作者:
Huan Liu
;
Genquan Han
;
Yan Liu
;
Xiaosheng Tang
;
Jingchen Yang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/13
Germanium
MOSFET
Amorphous
Si
passivation
Mobility
Surface
orientation
Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (RTN) in Devices and Circuits
其他
2016-01-01
Wang, Runsheng
;
Guo, Shaofeng
;
Ren, Pengpeng
;
Luo, Mulong
;
Zou, Jibin
;
Hang, Ru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Random telegraph noise (RTN)
MOSFET
VARIABILITY
RELIABILITY
MOSFETS
IMPACT
Strain effects on monolayer MoS2 field effect transistors
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Zeng, Lang
;
Xin, Zheng
;
Chang, Pengying
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
SCATTERING-THEORY
NANOSCALE
GRAPHENE
MOSFET
Strain effects on monolayer MoS2 field effect transistors
其他
2015-01-01
Zeng, Lang
;
Xin, Zheng
;
Chang, Pengying
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/04
SCATTERING-THEORY
NANOSCALE
GRAPHENE
MOSFET
Metal-Gate Resistance with Skin Effect Consideration in Nanoscale MOSFETs for Millimeter-Wave ICs
会议论文
作者:
Lam, Sang
;
Chan, Mansun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
metal-gate MOSFET
skin effect
nanoscale CMOS
millimeter-wave integrated circuits
gate resistance
Effect of Parasitic Capacitances and Resistances on the RF Performance of Nanoscale MOSFETs
会议论文
作者:
Lam, Sang
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/03
parasitic capacitances
nanoelectronic devices
MOSFET structures
access resistances
radio-frequency (RF)
Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation
其他
2013-01-01
Liu, Gai
;
Du, Gang
;
Lu, Tiao
;
Liu, Xiaoyan
;
Zhang, Pingwen
;
Zhang, Xing
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
Boltzmann transport equation (BTE)
double-gate FETs
numerical simulation
quasi-ballistic transport
BACKSCATTERING COEFFICIENT EXTRACTION
NANOSCALE MOSFETS
POISSON SYSTEM
MONTE-CARLO
WENO-SOLVER
TRANSISTORS
MOBILITY
DEVICES
MODEL
Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding-Gate MOSFETs and Solution from Accumulation to Strong Inversion Region
期刊论文
journal of computational and theoretical nanoscience, 2013
Ye, Yun
;
He, Jin
;
Zhang, Aixing
;
He, Hongyue
;
Chen, Qin
;
Wang, Hao
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/16
Non-Classical CMOS
Surrounding-Gate MOSFETs
Device Physics
Surface Potential
Accuracy
Continuity Issue
SYMMETRIC DOUBLE-GATE
MODEL
CHARGE
NONEQUILIBRIUM
CAPACITANCE
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