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北京航空航天大学 [4]
清华大学 [1]
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期刊论文 [7]
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Heavy ion irradiation induced hard error in MTJ of the MRAM memory array
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 7
作者:
Zhao, P. X.
;
Liu, T. Q.
;
Cai, C.
;
Li, D. Q.
;
Ji, Q. G.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2022/01/19
MTJ damage
Heavy ion
Displacement damage
Hard bit error
Annealing effect
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860
作者:
Wu, Bi
;
Zhang, Beibei
;
Cheng, Yuanqing
;
Wang, Ying
;
Liu, Dijun
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2019/12/10
Error correction code (ECC)
last level cache (LLC)
reliability
spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)
temperature
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 页码: 1851-1860
作者:
Wu, Bi
;
Zhang, Beibei
;
Cheng, Yuanqing
;
Wang, Ying
;
Liu, Dijun
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/30
Error correction code (ECC)
last level cache (LLC)
reliability
spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)
temperature
Total ionizing dose and synergistic effects of magnetoresistive random-access memory
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
作者:
Zhang, XY (Zhang, Xing-Yao)
;
Guo, Q (Guo, Qi)
;
Li, YD (Li, Yu-Dong)
;
Wen, L (Wen, Lin)
;
Zhang, XY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose
Synergistic Effect
High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 页码: 343-346
作者:
Wang, Zhaohao
;
Zhang, Lei
;
Wang, Mengxing
;
Wang, Zilu
;
Zhu, Daoqian
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Magnetoresistive random access memory (MRAM)
spin orbit torque (SOT)
spin transfer torque (STT)
high density
A spin Hall effect-based multi-level cell for MRAM
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Shi, Qian
;
Wang, Zhaohao
;
Gao, Yuqian
;
Chang, Liang
;
Kang, Wang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Magnetoresistive random access memory
multi-level cell
spin Hall effect
Non-volatile
Evaluation of Spin-Hall-assisted STT-MRAM for Cache Replacement
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Chang, Liang
;
Wang, Zhaohao
;
Gao, Yuqian
;
Kang, Wang
;
Zhang, Youguang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
spin orbit torque (SOT)
spin transfer torque (STT)
magnetoresistive random access memory (MRAM)
cache replacement
NVSim
GEM5
Exploring the Use of Emerging Nonvolatile Memory Technologies in Future FPGAs
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2013, 卷号: 21, 期号: [db:dc_citation_issue], 页码: 771-775
作者:
Pan, Yangyang
;
Li, Yiran
;
Sun, Hongbin
;
Xu, Wei
;
Zheng, Nanning
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/10
nonvolatile memory
Dynamic random-access memory (DRAM)
magnetoresistive random-access memory (MRAM)
field-programmable gate arrays (FPGA)
Micromagnetic studies of domain structures and switching properties in a magnetoresistive random access memory cell
会议论文
JOURNAL OF APPLIED PHYSICS, 49th Annual Conference on Magnetism and Magnetic Materials, Jacksonville, FL, Web of Science
Wu, GG
;
Yu, JA
;
Wei, FL
;
Liu, XX
;
WEi, D
收藏
  |  
浏览/下载:2/0
Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect
期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 95, 期号: 2, 页码: 764
Han, XF
;
Yu, ACC
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  |  
浏览/下载:13/0
  |  
提交时间:2013/09/24
MRAM TECHNOLOGY
MAGNETORESISTANCE
ELECTRODES
MEMORY
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