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	High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation
	Wang, Zhaohao; Zhang, Lei; Wang, Mengxing; Wang, Zilu; Zhu, Daoqian; Zhang, Youguang; Zhao, Weisheng
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39页码:343-346
关键词	Magnetoresistive random access memory (MRAM) spin orbit torque (SOT) spin transfer torque (STT) high density
ISSN号	0741-3106
DOI	10.1109/LED.2018.2795039
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000426794100004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5935023
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Wang, Zhaohao,Zhang, Lei,Wang, Mengxing,et al. High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation[J]. IEEE ELECTRON DEVICE LETTERS,2018,39:343-346.
APA	Wang, Zhaohao.,Zhang, Lei.,Wang, Mengxing.,Wang, Zilu.,Zhu, Daoqian.,...&Zhao, Weisheng.(2018).High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation.IEEE ELECTRON DEVICE LETTERS,39,343-346.
MLA	Wang, Zhaohao,et al."High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation".IEEE ELECTRON DEVICE LETTERS 39(2018):343-346.

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