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物理研究所 [3]
金属研究所 [3]
山东大学 [3]
合肥物质科学研究院 [3]
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期刊论文 [20]
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Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction
期刊论文
Crystengcomm, 2022, 卷号: 24, 期号: 38, 页码: 6642-6653
作者:
X. J. Liu
;
M. S. Liu
;
R. D. Zhu
;
B. H. Li
;
P. Wan
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2023/06/14
The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors
期刊论文
Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 2, 页码: 5
作者:
Chen, Y. R.
;
Zhang, Z. W.
;
Li, Z. M.
;
Jiang, H.
;
Miao, G. Q.
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  |  
浏览/下载:0/0
  |  
提交时间:2019/09/17
AlGaN
inserted layers
p-i-n structures
ultraviolet photodetectors
suppression
diodes
Materials Science
Physics
Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors
期刊论文
Nanotechnology, 2017, 卷号: 28, 期号: 43
作者:
Li,Qian
;
Li,Shilong
;
Yang,Dehua
;
Su,Wei
;
Wang,Yanchun
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  |  
浏览/下载:60/0
  |  
提交时间:2019/05/09
Carbon nanotubes
Thin-film transistors
Hybrid gate dielectric
Fully printing
High performance
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics
期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106
作者:
Jin, P.
;
He, G.
;
Fang, Z. B.
;
Liu, M.
;
Xiao, D. Q.
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  |  
浏览/下载:19/0
  |  
提交时间:2018/07/04
High-k Hfalox Gate Dielectrics
Sol-gel
Optical Properties
Electrical Properties
Leakage Current Transport Mechanism
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics
期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: Vol.43 No.3, 页码: 3101-3106
作者:
Li,W. D.
;
Jin,P.
;
Zhang,M.
;
Xiao,D. Q.
;
Fang,Z. B.
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  |  
浏览/下载:15/0
  |  
提交时间:2019/04/22
THIN-FILMS
INTERFACIAL PROPERTIES
HFO2 FILMS
MICROSTRUCTURE
EVAPORATION
NITRIDATION
DEPOSITION
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
作者:
Gao, Juan
;
He, Gang
;
Zhang, Jiwen
;
Chen, Xuefei
;
Jin, Peng
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  |  
浏览/下载:22/0
  |  
提交时间:2017/11/21
High-k Gate Dielectric
Atomic Layer Deposition
Electrical Properties
Leakage Current Mechanism
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics
期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769
作者:
Jin, Peng
;
He, Gang
;
Xiao, Dongqi
;
Gao, Juan
;
Liu, Mao
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/10/18
High-k Gate Dielectrics
Sol-gel
Electrical Properties
Leakage Current Transport Mechanism
Optical Properties
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics
期刊论文
Ceramics International, 2016, 卷号: Vol.42 No.6, 页码: 6761-6769
作者:
Sun,Zhaoqi
;
Liu,Yanmei
;
Zhang,Miao
;
Lv,Jianguo
;
Liu,Mao
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
THIN-FILMS
TEMPERATURE-DEPENDENCE
HAFNIUM
DEPOSITION
STACKS
ALD
Effects of low Reynolds number on flow stability of a transonic compressor
期刊论文
PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART G-JOURNAL OF AEROSPACE ENGINEERING, 2015, 卷号: 229, 期号: 4, 页码: 601-611
作者:
Zhao, Shengfeng
;
Lu, Xingen
;
Zhu, Junqiang
;
Ge, Han
;
Yang Chengwu
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  |  
浏览/下载:28/0
  |  
提交时间:2015/10/27
Low Reynolds number
transonic compressor
flow stability
numerical simulation
Space-charge dominated epitaxial BaTiO3 heterostructures
期刊论文
ACTA MATERIALIA, 2015, 卷号: 85, 页码: 207-215
作者:
Zhang, Wei
;
Gao, Yiqun
;
Kang, Limin
;
Yuan, Meiling
;
Yang, Qian
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  |  
浏览/下载:20/0
  |  
提交时间:2019/12/17
Transport mechanism
Leakage current
Schottky contacts
Barium
titanate
Epitaxial films
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