QQ客服 官方微博 反馈留言

	Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics
	Sun,Zhaoqi; Liu,Yanmei; Zhang,Miao; Lv,Jianguo; Liu,Mao; Gao,Juan; Xiao,Dongqi; He,Gang; Jin,Peng; Wang,Peihong
刊名	Ceramics International
	2016
卷号	Vol.42 No.6页码:6761-6769
关键词	THIN-FILMS TEMPERATURE-DEPENDENCE HAFNIUM DEPOSITION STACKS ALD
ISSN号	0272-8842
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156246
专题	安徽大学
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 2.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China 3.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Sun,Zhaoqi,Liu,Yanmei,Zhang,Miao,et al. Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics[J]. Ceramics International,2016,Vol.42 No.6:6761-6769.
APA	Sun,Zhaoqi.,Liu,Yanmei.,Zhang,Miao.,Lv,Jianguo.,Liu,Mao.,...&Wang,Peihong.(2016).Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics.Ceramics International,Vol.42 No.6,6761-6769.
MLA	Sun,Zhaoqi,et al."Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics".Ceramics International Vol.42 No.6(2016):6761-6769.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。