CORC

浏览/检索结果: 共34条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint 期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 6
作者:  Qi, Shaocheng;  Cunha, Joao;  Guo, Tian-Long;  Chen, Peiqin;  Zaccaria, Remo Proietti
收藏  |  浏览/下载:14/0  |  提交时间:2020/12/16
Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 卷号: 124, 期号: 41, 页码: 22793-22798
作者:  Dai, Chaoqi;  Qi, Guoqiang;  Qiao, Hai;  Wang, Weiliang;  Xiao, Han
收藏  |  浏览/下载:19/0  |  提交时间:2020/12/16
Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint 期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:  Dai, Chaoqi;  Chen, Peiqin;  Qi, Shaocheng;  Hu, Yongbin;  Song, Zhitang
收藏  |  浏览/下载:4/0  |  提交时间:2020/12/16
High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 9, 页码: 8102-8109
作者:  Yu, Jingjing;  Javaid, Kashif;  Liang, Lingyan;  Wu, Weihua;  Liang, Yu
收藏  |  浏览/下载:36/0  |  提交时间:2018/12/04
Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter 期刊论文
Journal of Alloys and Compounds, 2018
作者:  Q.B. Lin;  C. Zhang;  G. He;  B. Yang;  L. Zhu
收藏  |  浏览/下载:4/0  |  提交时间:2019/04/22
Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 11, 页码: 1676-1679
作者:  Yuan, Yuzhuo;  Yang, Jin;  Hu, Zhenjia;  Li, Yunpeng;  Du, Lulu
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/11
All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 12, 页码: 1876-1879
作者:  Yang, Jin;  Yuan, Yuzhuo;  Li, Yunpeng;  Du, Lulu;  Wang, Yiming
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/11
Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 2, 页码: 208-211
作者:  Li, Yunpeng;  Yang, Jin;  Wang, Yiming;  Ma, Pengfei;  Yuan, Yvzhuo
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/11
Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 4, 页码: 516-519
作者:  Yang, Jin;  Wang, Yiming;  Li, Yunpeng;  Yuan, Yuzhuo;  Hu, Zhenjia
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/11
Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator 期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 235-242
作者:  Ding, Xingwei[1];  Qin, Cunping[2];  Xu, Tao[3];  Song, Jiantao[4];  Zhang, Jianhua[5]
收藏  |  浏览/下载:10/0  |  提交时间:2019/04/24


©版权所有 ©2017 CSpace - Powered by CSpace