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	Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
	Yang, Jin; Wang, Yiming; Li, Yunpeng; Yuan, Yuzhuo; Hu, Zhenjia; Ma, Pengfei; Zhou, Li; Wang, Qingpu; Song, Aimin; Xin, Qian
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39期号:4页码:516-519
关键词	Complementary inverter indium gallium zinc oxide (IGZO) tin monoxide (SnO) thin-film transistor (TFT) uniformity static voltage gain noise margin
DOI	10.1109/LED.2018.2809796
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4571278
专题	山东大学
作者单位	Shandong Univ, Ctr Nano
推荐引用方式 GB/T 7714	Yang, Jin,Wang, Yiming,Li, Yunpeng,et al. Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity[J]. IEEE ELECTRON DEVICE LETTERS,2018,39(4):516-519.
APA	Yang, Jin.,Wang, Yiming.,Li, Yunpeng.,Yuan, Yuzhuo.,Hu, Zhenjia.,...&Xin, Qian.(2018).Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity.IEEE ELECTRON DEVICE LETTERS,39(4),516-519.
MLA	Yang, Jin,et al."Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity".IEEE ELECTRON DEVICE LETTERS 39.4(2018):516-519.

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