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合肥物质科学研究院 [4]
山东大学 [2]
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期刊论文 [10]
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2017 [3]
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Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
期刊论文
Journal of Alloys and Compounds, 2019, 页码: 543-549
作者:
Ma, Pengfei
;
Sun, Jiamin
;
Zhang, Guanqun
;
Liang, Guangda
;
Xin, Qian
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/11
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:
Ma, Pengfei
;
Sun, Jiamin
;
Zhang, Guanqun
;
Liang, Guangda
;
Xin, Qian
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/11
HfAlO
High-k
Gate insulator
A-InGaZnO
Thin-film transistor
Atomic
layer deposition
Low-power device
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:
He, Gang
;
Jiang, Shanshan
;
Li, Wendong
;
Zheng, Changyong
;
He, Huaxin
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/05/25
High-k Gate Dielectric
Atomic-layer-deposition
Interface Stability
Phase Separation
Annealing Temperature
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:
Gao, J.
;
He, G.
;
Liu, M.
;
Lv, J. G.
;
Sun, Z. Q.
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2017/11/21
High-k Dielectric
Interface Thermal Stability
Atomic-layer-deposition
Band Alignment
Electrical Properties
Leakage Current Mechanism
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
期刊论文
NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12, 页码: -
作者:
Yang, LF
;
Wang, T
;
Zou, Y
;
Lu, HL
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2017/12/08
Band Alignments
Hfalo Dielectric
Inp
Atomic Layer Deposition
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
作者:
Gao, Juan
;
He, Gang
;
Zhang, Jiwen
;
Chen, Xuefei
;
Jin, Peng
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2017/11/21
High-k Gate Dielectric
Atomic Layer Deposition
Electrical Properties
Leakage Current Mechanism
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:
Gao, Juan
;
He, Gang
;
Sun, Zhaoqi
;
Chen, Hanshuang
;
Zheng, Changyong
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2017/10/18
High-k Gate Dielectric
Atomic-layer-deposition
Electrical Properties
Carrier Transportation Mechanism
Incorporation
Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation
期刊论文
2016, 2016
谭桢
;
赵连锋
;
王敬
;
许军
;
Tan Zhen
;
Zhao Lian-Feng
;
Wang Jing
;
Xu Jun
收藏
  |  
浏览/下载:8/0
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
作者:
Zhou, Guangdong
;
Wu, Bo
;
Liu, Xiaoqin
;
Li, Ping
;
Zhang, Shuangju
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2016/06/27
Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory
期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 1, 页码: 13110-13110
Liu, WL
;
Lee, PF
;
Dai, JY
;
Wang, J
;
Chan, HLW
;
Choy, CL
;
Song, ZT
;
Feng, SL
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/03/24
CHEMICAL-VAPOR-DEPOSITION
DEVICE
HFO2
DIELECTRICS
OXIDATION
SIO2
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