Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation

doi:10.1016/j.jallcom.2016.01.171

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation
	Gao, Juan 1,2; He, Gang 1; Sun, Zhaoqi 1; Chen, Hanshuang 1; Zheng, Changyong 1; Jin, Peng 1; Xiao, Dongqi 1; Liu, Mao 3
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2016-05-15
卷号	667 期号:无页码:352-358
关键词	High-k Gate Dielectric Atomic-layer-deposition Electrical Properties Carrier Transportation Mechanism Incorporation
DOI	10.1016/j.jallcom.2016.01.171
文献子类	Article
英文摘要	Effect of Al2O3 incorporation on the electrical properties and carrier transportation of atomic-layer-deposited (ALD) HfAlO high-k gate dielectrics on Si substrates have been investigated. Electrical analyses indicate that interfacial properties of HfAlO/Si gate stack have been improved and leakage current is reduced after Al2O3 incorporation into HfO2. Additionally, the HfAlO sample with precursor ratio (TEMAH: TMA) of 4:2 exhibits the lowest interface state density (D-it) of 3.6 x 10(11) cm(-2) eV(-1), the lowest border trapped oxide charge density (N-bt) of 2.4 x 10(11) cm(-2), the lower density of oxide charge (Q(ox)) of 0.9 x 10(12) cm(-2), and the lowest frequency dispersion of 0.15%. In addition, the carrier transportation mechanism for both HfO2 and HfAlO has been investigated systematically. Based on the analysis, it can be concluded that Poole-Frenkle (P-F) emission is main conduction mechanism at the low electric field, and direct tunneling (D-T)dominates the conduction mechanism at the high field, respectively. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词	TEMPERATURE-DEPENDENCE ; LEAKAGE CURRENT ; DIELECTRICS ; OXIDE ; FILMS ; SI ; CAPACITORS ; THICKNESS
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
WOS记录号	WOS:000371556400053
资助机构	National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Key Project of Fundamental Research(2013CB632705 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; National Natural Science Foundation of China(51572002 ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(J05015131) ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Outstanding Young Scientific Foundation ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; Youth Science Research Foundation of Anhui University(KJJQ1103) ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; "211 project" of Anhui University ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 2012CB932303) ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 11474284 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51102072 ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005) ; 51502005)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/22144]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Gao, Juan,He, Gang,Sun, Zhaoqi,et al. Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,667(无):352-358.
APA	Gao, Juan.,He, Gang.,Sun, Zhaoqi.,Chen, Hanshuang.,Zheng, Changyong.,...&Liu, Mao.(2016).Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation.JOURNAL OF ALLOYS AND COMPOUNDS,667(无),352-358.
MLA	Gao, Juan,et al."Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation".JOURNAL OF ALLOYS AND COMPOUNDS 667.无(2016):352-358.