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CORC

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Stable Red Light-Emitting Devices Based onCd:CsMnBr3With High Photoluminescence Quantum Yield via Cd Incorporation 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 页码: 6
作者:  Ma, Yibo;  Zhang, Xiaodong;  Qiu, Haiyu;  Guo, Jing;  Tian, Chuan
收藏  |  浏览/下载：7/0  |  提交时间：2023/12/12
North Pacific Upper-Ocean Cold Temperature Biases in CMIP6 Simulations and the Role of Regional Vertical Mixing 期刊论文
JOURNAL OF CLIMATE, 2020, 卷号: 33, 期号: 17, 页码: 7523-7538
作者:  Zhu, Yuchao;  Zhang, Rong-Hua;  Sun, Jichang
收藏  |  浏览/下载：8/0  |  提交时间：2021/04/14
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 488, 页码: 293-302
作者:  Yang, Chao;  Zhang, Fanglong;  Yin, Zhipeng;  Su, Yan;  Qin, Fuwen
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/02
Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 卷号: 52
作者:  Yang, Chao;  Gu, Zhenghao;  Yin, Zhipeng;  Qin, Fuwen;  Wang, Dejun
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/02
A Modified Vertical Mixing Parameterization for Its Improved Ocean and Coupled Simulations in the Tropical Pacific 期刊论文
JOURNAL OF PHYSICAL OCEANOGRAPHY, 2019, 卷号: 49, 期号: 1, 页码: 21-37
作者:  Zhu, Yuchao;  Zhang, Rong-Hua
收藏  |  浏览/下载：30/0  |  提交时间：2019/08/26
A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 5, 页码: 670-674
作者:  Zhan, Xuepeng;  Shen, Chengda;  Ji, Zhigang;  Chen, Jiezhi;  Fang, Hui
收藏  |  浏览/下载：18/0  |  提交时间：2019/12/11
Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 6, 页码: 2620-2623
作者:  Lan, Linfeng;  Dai, Xingqiang;  He, Changchun;  Liu, Lu;  Yang, Xiaobao
收藏  |  浏览/下载：48/0  |  提交时间：2019/12/18
Capacitance–Voltage Measurements and Bias Temperature Stress Induced Flatband Voltage Instability in 4H-SiC MOS Capacitors 会议论文
Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018)
作者:  Yang C(杨超);  Wang DJ(王德君)
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/02
A Fast Vth Measurement Technique for NBTI Behavior Characterization. 期刊论文
IEEE Electron Device Letters, 2018, 卷号: Vol.39 No.2, 页码: 172-175
作者:  Yu, Xiao;  Cheng, Ran;  Liu, Wei;  Qu, Yiming;  Han, Jinghui
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/26
A Fast Vth Measurement (FVM) Technique for NBTI Behavior Characterization 期刊论文
IEEE Electron Device Letters, 2018, 卷号: Vol.39 No.2, 页码: 172-175
作者:  Xiao Yu;  Ran Cheng;  Wei Liu;  Yiming Qu;  Jinghui Han
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26

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