Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor

	Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor
	Lan, Linfeng; Dai, Xingqiang; He, Changchun; Liu, Lu; Yang, Xiaobao; Liang, Lingyan; Cao, Hongtao; Peng, Junbiao
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66 期号:6 页码:2620-2623
关键词	INSTABILITY
DOI	10.1109/TED.2019.2911635
英文摘要	Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18262]
专题	2019专题
作者单位	Lan, LF (reprint author), South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China.
推荐引用方式 GB/T 7714	Lan, Linfeng,Dai, Xingqiang,He, Changchun,et al. Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(6):2620-2623.
APA	Lan, Linfeng.,Dai, Xingqiang.,He, Changchun.,Liu, Lu.,Yang, Xiaobao.,...&Peng, Junbiao.(2019).Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(6),2620-2623.
MLA	Lan, Linfeng,et al."Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.6(2019):2620-2623.