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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Impact of Sputtering Power on Amorphous In-Al-Zn-O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 5, 页码: 2219-2223 作者:  Xu, Weidong;  Xu, Meng;  Jiang, Jianfeng;  Xu, Sanjin;  Feng, Xianjin 收藏  |  浏览/下载：120/0  |  提交时间：2019/12/11 Amorphous-oxide-semiconductor (AOS)  In-Al-Zn-O (IAZO)  sputtering  power  thin film transistor (TFT)   Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 2, 页码: 950-956 作者:  Li, Yunpeng;  Zhang, Jiawei;  Yang, Jin;  Yuan, Yvzhuo;  Hu, Zhenjia 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11 CMOS  IC  oxide semiconductor  thin-film transistor (TFT)   Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 11, 页码: 1676-1679 作者:  Yuan, Yuzhuo;  Yang, Jin;  Hu, Zhenjia;  Li, Yunpeng;  Du, Lulu 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11 Complementary inverter  indium gallium zinc oxide (InGaZnO or IGZO)  tin  monoxide (SnO)  low-power  high gain  ring oscillator (RO)  thin-film  transistor (TFT)   All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 12, 页码: 1876-1879 作者:  Yang, Jin;  Yuan, Yuzhuo;  Li, Yunpeng;  Du, Lulu;  Wang, Yiming 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 Static random access memory (SRAM)  complementary inverter  indium  gallium zinc oxide (InGaZnO or IGZO)  tin monoxide (SnO)  thin-film  transistor (TFT)   Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 4, 页码: 1377-1382 作者:  Wang, Yiming;  Yang, Jin;  Wang, Hanbin;  Zhang, Jiawei;  Li, He 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 Amorphous indium-gallium-zinc oxide ( a-InGaZnO)  current gain  high  frequency  thin-film transistor (TFT)   Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 2, 页码: 208-211 作者:  Li, Yunpeng;  Yang, Jin;  Wang, Yiming;  Ma, Pengfei;  Yuan, Yvzhuo 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11 Complementary inverter  logic gates  ring oscillator  tin monoxide  (SnO)  indium-gallium-zinc-oxide (IGZO)  thin-film transistor (TFT)   Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 4, 页码: 516-519 作者:  Yang, Jin;  Wang, Yiming;  Li, Yunpeng;  Yuan, Yuzhuo;  Hu, Zhenjia 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11 Complementary inverter  indium gallium zinc oxide (IGZO)  tin monoxide  (SnO)  thin-film transistor (TFT)  uniformity  static voltage gain  noise margin