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科研机构
湖南大学 [6]
山东大学 [3]
上海硅酸盐研究所 [2]
清华大学 [1]
中国科学院大学 [1]
内容类型
期刊论文 [13]
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2019 [5]
2018 [3]
2017 [1]
2015 [3]
2010 [1]
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The Test of a High-Power, Semi-Insulating, Linear-Mode, Vertical 6H-SiC PCSS
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 4, 页码: 1837
作者:
Wu, Qilin
;
Xun, Tao
;
Zhao, Yuxin
;
Yang, Hanwu
;
Huang, Wei
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2019/12/26
6H silicon carbide (6H-SiC)
high-voltage encapsulation
photoconductive semiconductor switch (PCSS)
Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:
Jun Wang
;
Xi Jiang
;
Zongjian Li
;
Z. John Shen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
MOSFET
Silicon carbide
Logic gates
Insulated gate bipolar transistors
Switches
Leakage currents
Silicon
Failure analysis
gate control
hybrid switch (HyS)
IGBT
short-circuit (SC)
Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
Z. John Shen
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/13
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Gate
control
hybrid
switch
IGBT
junction
temperature
mosfet
power
loss
SiC
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Wang, J
;
Li, ZJ
;
Jiang, X
;
Zeng, C
;
Shen, ZJ
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Gate control
hybrid switch
IGBT
junction temperature
MOSFET
power loss
SiC
Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:
Wang, J
;
Jiang, X
;
Li, ZJ
;
Shen, ZJ
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/17
Failure analysis
gate control
hybrid switch (HyS)
IGBT
short-circuit (SC)
Silicon Carbide (SiC) MOSFET
Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 5, 页码: 2047, 2051
作者:
Cao, Penghui
;
Huang, Wei
;
Guo, Hui
;
Zhang, Yuming
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2018/12/28
4H Silicon Carbide (4H-SiC)
aluminum doped ZnO (AZO)
photoconductive semiconductor switch (PCSS)
silver mirror
Operation and Modulation of H7 Current-Source Inverter With Hybrid SiC and Si Semiconductor Switches
期刊论文
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2018, 卷号: 6, 期号: 1, 页码: 387-399
作者:
Wang, Weiqi
;
Gao, Feng
;
Yang, Yongheng
;
Blaabjerg, Frede
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/11
Efficiency improvement
H7 current source inverter (CSI)
silicon
carbide (SiC) switch
zero-current switching (ZCS)
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2018, 页码: 1
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
John Shen GAE
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/26
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Hybrid
switch
SiC
MOSFET
IGBT
gate
control
power
loss
junction
temperature
Design optimisation of self-powered gate driver for ultra-fast DC solid-state circuit breakers using SiC JFETs
期刊论文
IET POWER ELECTRONICS, 2017, 卷号: Vol.10 No.15, 页码: 2149-2156
作者:
He, Dong
;
Xiong, Zhijie
;
Lei, Zhiqi
;
Shuai, Zhikang
;
Shen, Zheng John
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/31
silicon
compounds
wide
band
gap
semiconductors
circuit
breakers
junction
gate
field
effect
transistors
driver
circuits
DC-DC
power
convertors
power
distribution
protection
self-powered
gate
driver
ultra-fast
DC
solid-state
circuit
breakers
silicon
carbide
SiC
junction
gate
field-effect
transistor
JFET
DC
distribution
protection
self-powered
SSCB
solid-state
switch
optimised
gate
drivers
optimised
fault
detection
circuit
forward-flyback
DC-DC
converter
SSCB
gate
driver
fault
isolation
gate
driver
circuit
parameters
effect
protection
speed
Matlab
calculation
dynamic
response
voltage
400
V
SiC
Application of an al-doped zinc oxide subcontact layer on vanadium-compensated 6h-sic photoconductive switches
期刊论文
Chinese physics b, 2015, 卷号: 24, 期号: 4, 页码: 5
作者:
Zhou Tian-Yu
;
Liu Xue-Chao
;
Huang Wei
;
Dai Chong-Chong
;
Zheng Yan-Qing
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/10
Photoconductive semiconductor switch
Sic
N(+)-azo subcontact layer
On-state resistance
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