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科研机构
半导体研究所 [13]
内容类型
期刊论文 [10]
会议论文 [3]
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2010 [3]
2006 [2]
2005 [1]
2001 [1]
2000 [3]
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半导体物理 [13]
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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
期刊论文
journal of optics, 2010, 卷号: 12, 期号: 5, 页码: art. no. 055203
Huang X (Huang X.)
;
Zhang XH (Zhang X. H.)
;
Zhu YG (Zhu Y. G.)
;
Li T (Li T.)
;
Han LF (Han L. F.)
;
Shang XJ (Shang X. J.)
;
Ni HQ (Ni H. Q.)
;
Niu ZC (Niu Z. C.)
收藏
  |  
浏览/下载:83/6
  |  
提交时间:2010/08/17
InAs quantum dots
nonlinear refraction
reflection Z-scan
dc electric field effect
ELECTROOPTIC PROPERTIES
SATURABLE ABSORBER
OPTICAL-PROPERTIES
WELL STRUCTURES
SINGLE-BEAM
BAND-GAP
ELECTROABSORPTION
ABSORPTION
REFLECTION
DEPENDENCE
Temperature dependence of hole spin relaxation in ultrathin InAs monolayers
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 5, 页码: 1597-1600
作者:
Zhang XH
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  |  
浏览/下载:81/0
  |  
提交时间:2010/04/28
Ultrathin InAs monolayer
Hole spin relaxation
DP mechanism
SEMICONDUCTOR QUANTUM DOTS
WELLS
GAAS
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
期刊论文
optics communications, 2010, 卷号: 283, 期号: 7, 页码: 1510-1513
作者:
Zhang XH
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  |  
浏览/下载:145/2
  |  
提交时间:2010/04/22
InAs quantum dots
Nonlinear refraction
Reflection Z-scan
REFLECTION Z-SCAN
OPTICAL NONLINEARITIES
2-PHOTON ABSORPTION
SATURABLE ABSORBER
WELL STRUCTURES
SINGLE-BEAM
ELECTROABSORPTION
DISPERSION
SOLIDS
GAAS
Surface morphology evolution of strained InAs/GaAs(331)a films
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Gong, M (Gong, Meng)
;
Fang, ZD (Fang, Zhidan)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
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  |  
浏览/下载:119/36
  |  
提交时间:2010/03/29
surface morphology evolution
InAs nanostructures
island-pit pairs
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
COOPERATIVE NUCLEATION
HETEROEPITAXY
TRANSITION
ISLANDS
GROWTH
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
期刊论文
journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
Kong LM (Kong Lingmin)
;
Cai JF (Cai Jiafa)
;
Wu ZY (Wu Zhengyun)
;
Gong Z (Gong Zheng)
;
Fang ZD (Fang Zhidan)
;
Niu ZC (Niu Zhichuan)
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  |  
浏览/下载:52/0
  |  
提交时间:2010/04/11
InGaAs layer
InAs quantum dots
time-resolved PL spectra
1.3 MU-M
CARRIER DYNAMICS
LASERS
GROWTH
WAVELENGTH
EMISSION
ISLANDS
LAYERS
SIZE
1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer
期刊论文
journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 5, 页码: 324-327
Fang ZD
;
Gong Z
;
Miao ZH
;
Niu ZC
;
Shen GD
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  |  
浏览/下载:148/11
  |  
提交时间:2010/03/17
InAs/GaAs quantum dots
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/10/29
molecular beam epitaxy
InGaAs islands
photolumineseence
line-width
1.3 MU-M
INAS/GAAS QUANTUM DOTS
OPTICAL-PROPERTIES
CAP LAYER
GAAS
LUMINESCENCE
STRAIN
Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2000, 卷号: 39, 期号: 9a, 页码: 5076-5079
Wang XD
;
Niu ZC
;
Feng SL
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  |  
浏览/下载:64/0
  |  
提交时间:2010/08/12
InAs quantum dots
strain-reduction
molecular beam epitaxy (MBE)
red shift
photoluminescence
1.3 MU-M
INGAAS
ENERGY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2000, 卷号: 7, 期号: 3-4, 页码: 383-387
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/08/12
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
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